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B1063 PDF预览

B1063

更新时间: 2024-09-16 23:14:19
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 74K
描述
For High Power Amplification

B1063 数据手册

 浏览型号B1063的Datasheet PDF文件第2页浏览型号B1063的Datasheet PDF文件第3页 
Power Transistors  
2SB1063  
Silicon PNP triple diffusion planar type  
For high power amplification  
Complementary to 2SD1499  
Unit: mm  
10.0 0.2  
5.5 0.2  
4.2 0.2  
2.7 0.2  
Features  
φ 3.1 0.1  
Extremely satisfactory linearity of the forward current transfer ratio hFE  
Wide safe operation area  
High transition frequency fT  
1.3 0.2  
Full-pack package which can be installed to the heat sink with one  
screw  
1.4 0.1  
+0.2  
–0.1  
0.5  
0.8 0.1  
Absolute Maximum Ratings TC = 25°C  
2.54 0.3  
5.08 0.5  
Parameter  
Symbol  
Rating  
100  
100  
5  
Unit  
V
1: Base  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
2: Collector  
3: Emitter  
EIAJ: SC-67  
V
1
2 3  
V
TO-220F-A1 Package  
Collector current  
IC  
ICP  
PC  
5  
A
Peak collector current  
Collector power dissipation  
8  
A
40  
W
Ta = 25°C  
2.0  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
Electrical Characteristics TC = 25°C 3°C  
Parameter  
Base-emitter voltage  
Symbol  
VBE  
Conditions  
VCE = −5 V, IC = −3 A  
VCB = −100 V, IE = 0  
VEB = −3 V, IC = 0  
Min  
Typ  
Max  
1.8  
50  
50  
Unit  
V
Collector-base cutoff current (Emitter open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio  
ICBO  
µA  
µA  
IEBO  
hFE1  
VCE = −5 V, IC = −20 mA  
VCE = −5 V, IC = −1 A  
VCE = −5 V, IC = −3 A  
20  
40  
20  
*
hFE2  
200  
hFE3  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = −3 A, IB = − 0.3 A  
2  
V
MHz  
pF  
fT  
VCE = −5 V, IC = − 0.5 A, f = 1 MHz  
VCB = −10 V, IE = 0, f = 1 MHz  
20  
Collector output capacitance  
Cob  
170  
(Common base, input open circuited)  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Rank classification  
*
Rank  
R
Q
P
hFE2  
40 to 80  
60 to 120  
100 to 200  
Publication date: February 2003  
SJD00039AED  
1

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