Power Transistors
2SB1063
Silicon PNP triple diffusion planar type
For high power amplification
Complementary to 2SD1499
Unit: mm
10.0 0.2
5.5 0.2
4.2 0.2
2.7 0.2
■ Features
φ 3.1 0.1
• Extremely satisfactory linearity of the forward current transfer ratio hFE
• Wide safe operation area
• High transition frequency fT
1.3 0.2
• Full-pack package which can be installed to the heat sink with one
screw
1.4 0.1
+0.2
–0.1
0.5
0.8 0.1
■ Absolute Maximum Ratings TC = 25°C
2.54 0.3
5.08 0.5
Parameter
Symbol
Rating
−100
−100
−5
Unit
V
1: Base
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open) VCEO
Emitter-base voltage (Collector open) VEBO
2: Collector
3: Emitter
EIAJ: SC-67
V
1
2 3
V
TO-220F-A1 Package
Collector current
IC
ICP
PC
−5
A
Peak collector current
Collector power dissipation
−8
A
40
W
Ta = 25°C
2.0
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
■ Electrical Characteristics TC = 25°C 3°C
Parameter
Base-emitter voltage
Symbol
VBE
Conditions
VCE = −5 V, IC = −3 A
VCB = −100 V, IE = 0
VEB = −3 V, IC = 0
Min
Typ
Max
−1.8
−50
−50
Unit
V
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
ICBO
µA
µA
IEBO
hFE1
VCE = −5 V, IC = −20 mA
VCE = −5 V, IC = −1 A
VCE = −5 V, IC = −3 A
20
40
20
*
hFE2
200
hFE3
Collector-emitter saturation voltage
Transition frequency
VCE(sat) IC = −3 A, IB = − 0.3 A
−2
V
MHz
pF
fT
VCE = −5 V, IC = − 0.5 A, f = 1 MHz
VCB = −10 V, IE = 0, f = 1 MHz
20
Collector output capacitance
Cob
170
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. : Rank classification
*
Rank
R
Q
P
hFE2
40 to 80
60 to 120
100 to 200
Publication date: February 2003
SJD00039AED
1