SMD General Purpose Bridge Rectifier Diode
B05S-G Thru B10S-G
Reverse Voltage: 50 to 1000 Volts
Forward Current: 0.8 A
RoHS Device
Features
MBS
-Rating to 1000V PRV.
0.031 (0.80)
0.019 (0.50)
-Ideal for printed circuit board.
+
-
-Reliable low cost construction utilizing
molded plastic technique results in
inexpensive product.
0.165 (4.20)
0.150 (3.80)
X X X
-Pb free product.
0.014 (0.35)
0.006 (0.15)
0.106 (2.70)
0.090 (2.30)
0.275 (7.0) max
Mechanical data
-Polarity: Symbol molded on body.
-Weight: 0.125 grams.
0.008 (0.20)max
-Mounting position: Any.
0.193 (4.90)
0.177 (4.50)
0.106 (2.70)
0.090 (2.30)
Dimensions in inches and (millimeter)
Maximum Rating And Electrical Characteristics
Rating at TA=25°C, unless otherwise noted.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol
Marking
B05S-G B1S-G
B2S-G
B2S
B4S-G
B4S
B6S-G
B6S
B8S-G B10S-G
Parameter
Unit
B05S
50
B1S
100
70
B8S
800
560
800
B10S
1000
700
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
400
280
600
420
V
V
V
35
Maximum DC Blocking Voltage
1000
600
400
0.8
50
100
200
Maximum Average Forward Rectified
I(AV)
IFSM
A
A
Current (Note 1)
@TA=40°C
Peak Forward Surge Current, 8.3mS single
half sine-wave, superimposed on rated load
(JEDEC Method)
30
Maximum Forward Voltage at 0.8A DC
VF
IR
1.1
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ=25°C
@TJ=125°C
5.0
500
μA
Typical Junction Capacitance
per element (Note 2)
15
CJ
pF
Typical Thermal Resistance (Note 3)
75
RθJA
TJ
°C/W
°C
-55 to +150
-55 to +150
Operating Temperature Range
Storage Temperature Range
TSTG
°C
Notes: 1. Mounted on P.C. Board.
2. Measured at 1MHz and applied reverse voltage of 4V DC.
3. Thermal resistance: Junction to Ambient.
REV:D
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QW-BBR01
Comchip Technology CO., LTD.