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AZ23C36-V-G-GS08 PDF预览

AZ23C36-V-G-GS08

更新时间: 2024-11-07 19:34:43
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
8页 90K
描述
DIODE 36 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, GREEN PACKAGE-3, Voltage Regulator Diode

AZ23C36-V-G-GS08 技术参数

生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.11Is Samacsys:N
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:250 Ω
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL最大功率耗散:0.3 W
认证状态:Not Qualified标称参考电压:36 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10最大电压容差:5.56%
工作测试电流:5 mABase Number Matches:1

AZ23C36-V-G-GS08 数据手册

 浏览型号AZ23C36-V-G-GS08的Datasheet PDF文件第2页浏览型号AZ23C36-V-G-GS08的Datasheet PDF文件第3页浏览型号AZ23C36-V-G-GS08的Datasheet PDF文件第4页浏览型号AZ23C36-V-G-GS08的Datasheet PDF文件第5页浏览型号AZ23C36-V-G-GS08的Datasheet PDF文件第6页浏览型号AZ23C36-V-G-GS08的Datasheet PDF文件第7页 
AZ23-V-G-Series  
Vishay Semiconductors  
Small Signal Zener Diodes, Dual  
Features  
• Dual silicon planar Zener diodes,  
common anode  
• The Zener voltages are graded  
according to the international E 24  
standard  
1
2
• The parameters are valid for both diodes  
in one case. ΔV and ΔR of the two  
Z
zj  
20512  
1
diodes in one case is 5 %  
3
20456  
• AEC-Q101 qualified  
• Compliant to RoHS directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
Mechanical Data  
Case: SOT-23  
Weight: approx. 8.1 mg  
Packaging codes/options:  
GS18/10 k per 13" reel, (8 mm tape), 10 k/box  
GS08/3 k per 7" reel, (8 mm tape), 15 k/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test conditions  
Symbol  
Ptot  
Value  
300  
Unit  
Device on fiberglass substrate,  
see layout on page 6  
Power dissipation  
mW  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test conditions  
Symbol  
RthJA  
Value  
420  
Unit  
K/W  
Device on fiberglass substrate,  
see layout on page 6  
Thermal resistance junction to ambient air  
Tj  
Junction temperature  
150  
°C  
°C  
Tstg  
Storage temperature range  
- 65 to + 150  
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902  
Document Number 85867  
www.vishay.com  
1
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Rev. 1.1, 26-Aug-09  

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