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AZ23B3V9-GS18 PDF预览

AZ23B3V9-GS18

更新时间: 2024-11-07 14:29:23
品牌 Logo 应用领域
威世 - VISHAY 测试光电二极管
页数 文件大小 规格书
8页 194K
描述
DIODE 3.9 V, 0.3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, PLASTIC PACKAGE-3, Voltage Regulator Diode

AZ23B3V9-GS18 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.23Is Samacsys:N
配置:COMMON ANODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:ZENER DIODE最大动态阻抗:95 Ω
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:0.3 W
认证状态:Not Qualified标称参考电压:3.9 V
子类别:Voltage Reference Diodes表面贴装:YES
技术:ZENER端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED最大电压容差:2.05%
工作测试电流:5 mABase Number Matches:1

AZ23B3V9-GS18 数据手册

 浏览型号AZ23B3V9-GS18的Datasheet PDF文件第2页浏览型号AZ23B3V9-GS18的Datasheet PDF文件第3页浏览型号AZ23B3V9-GS18的Datasheet PDF文件第4页浏览型号AZ23B3V9-GS18的Datasheet PDF文件第5页浏览型号AZ23B3V9-GS18的Datasheet PDF文件第6页浏览型号AZ23B3V9-GS18的Datasheet PDF文件第7页 
AZ23-Series  
Vishay Semiconductors  
VISHAY  
Small Signal Zener Diodes, Dual  
Features  
• These diodes are also available in other case  
styles and configurations including: the dual diode  
common cathode configuration with type designa-  
tion DZ23, the single diode SOT-23 case with the  
type designation BZX84C, and the single diode  
SOD-123 case with the type designation BZT52C.  
3
1
2
18070  
• Dual Silicon Planar Zener Diodes, Common  
Anode  
• The Zener voltages are graded according to the  
international E 24 standard.  
• The parameters are valid for both diodes in one  
case. VZ and rzj of the two diodes in one case  
is 5 %  
Mechanical Data  
Case: SOT-23 Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13 " reel, (8 mm tape), 10 k/box  
GS08 / 3 k per 7 " reel, (8 mm tape), 15 K/box  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
mW  
1)  
Power dissipation  
P
tot  
300  
1)  
Device on fiberglass substrate, see layout  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
1)  
Thermal resistance junction to ambient air  
Junction temperature  
R
°C/W  
thJA  
420  
T
150  
°C  
°C  
j
Storage temperature range  
T
- 65 to + 150  
S
1)  
Device on fiberglass substrate, see layout  
Document Number 85759  
Rev. 1.4, 08-Jul-04  
www.vishay.com  
1

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