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AZ23B30-HE3-18 PDF预览

AZ23B30-HE3-18

更新时间: 2024-10-28 22:04:03
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 130K
描述
DIODE ZENER 30V 300MW SOT23

AZ23B30-HE3-18 数据手册

 浏览型号AZ23B30-HE3-18的Datasheet PDF文件第2页浏览型号AZ23B30-HE3-18的Datasheet PDF文件第3页浏览型号AZ23B30-HE3-18的Datasheet PDF文件第4页浏览型号AZ23B30-HE3-18的Datasheet PDF文件第6页浏览型号AZ23B30-HE3-18的Datasheet PDF文件第7页浏览型号AZ23B30-HE3-18的Datasheet PDF文件第8页 
AZ23-Series  
Vishay Semiconductors  
www.vishay.com  
V
V
0.8  
1.6  
25  
15  
ΔVZ = Rzth x IZ  
0.7  
VZ at IZ = 5 mA  
1.4  
1.2  
10  
0.6  
0.5  
0.4  
ΔVZ  
ΔVZ  
1
0.8  
0.6  
8
7
0.3  
0.2  
0.1  
6.2  
5.9  
0.4  
0.2  
5.6  
5.1  
0
- 1  
0
- 0.2  
- 0.4  
4.7  
3.6  
- 0.2  
1
2
3
4
5
10  
2
3
4
5
100 V  
100 120 140 C  
Tj  
0
20 40 60 80  
18127  
18124  
VZ at IZ = 5 mA  
Fig. 7 - Change of Zener Voltage vs. Junction Temperature  
Fig. 10 - Change of Zener Voltage from Turn-on up to the Point of  
Thermal Equilibrium vs. Zener Voltage  
mV/°C  
100  
V
5
Δ
VZ = Rzth x IZ  
IZ = 5 mA  
4
3
2
ΔVZ  
80  
60  
Δ
Tj  
ΔVZ  
IZ = 5 mA  
40  
20  
1
IZ = 2 mA  
0
0
0
20  
40  
60  
80  
100 V  
0
20  
40  
60  
80  
100 V  
VZ  
18128  
VZ  
18125  
Fig. 8 - Temperature Dependence of Zener Voltage vs.  
Fig. 11 - Change of Zener Voltage from Turn-on up to the Point of  
Thermal Equilibrium vs. Zener Voltage  
Zener Voltage  
mA  
50  
V
9
T = 25 °C  
j
3.9  
5.6  
2.7  
8
7
6.8  
3.3 4.7  
40  
8.2  
lZ  
51  
ΔV  
6
5
4
Z
30  
20  
43  
36  
3
2
Test  
current  
IZ 5 mA  
1
10  
0
0
I
= 2 mA  
Z
- 1  
0
20 40 60 80 100 120 140 °C  
0
1
2
3
4
5
6
7
8
9
10 V  
18126  
T
j
V
18111  
Z
Fig. 9 - Change of Zener Voltage vs. Junction Temperature  
Fig. 12 - Breakdown Characteristics  
Rev. 2.0. 27-Feb-18  
Document Number: 85759  
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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