Datasheet > ATR7035

ATR7035

更新时间： 2024-11-27 21:54:59

品牌	Logo	应用领域
爱特美尔 - ATMEL		/
页数	文件大小	规格书
3页	169K
描述
ATR7035 ATR7035

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中文翻译

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数据手册

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ATR7035 数据手册

Features

• Frequency Range 5 GHz to 6 GHz

• P_OUTMaximum 28 dBm

• Gain Typically 19 dB

• V_CC3.0 V to 3.9 V

• Package: QFN16

• Current Consumption in Power Down Mode Typically ≤15 µA

Benefits

• Biasing Control Extends Battery Life Time

• Simple Input and Output Matching

• One Single Supply Voltage Required

5.8-GHz WDCT

Power Amplifier

Electrostatic sensitive device.

Observe precautions for handling.

ATR7035

Summary

Description

Process

The 5-GHz power amplifier is designed using Atmel’s Silicon-Germanium (SiGe) pro-

cess and provides excellent noise performance as well as good power-added

efficiency.

Preliminary

Circuitry

The PA consists of a 2-stage amplifier with a maximum output power of 28 dBm. The

output stages were realized using an open-collector structure. The IC features 50-Ω

input matching. Power-up/down and output level are controlled at bias control pin 6

(V_CTL).

Figure 1. Block Diagram

VCC1

VCC2

ATR7035

RFOUT

RFIN

Matching

RFOUT

Bias control

VCTL

VCC_CTL

Rev. 4577DS–DECT–11/04

Note: This is a summary document. A complete document

is available under NDA. For more information, please con-

tact your local Atmel sales office.

12 3

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