Datasheet > ATP602_12

ATP602_12

更新时间： 2024-11-30 12:50:47

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
7页	462K
描述
General-Purpose Switching Device Applications

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ATP602_12 数据手册

ATP602

Ordering number : ENA1543A

SANYO Sem iconductors

DATA S HEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

ATP602

Features

•

ON-resistance R (on)=2.1 (typ.)

10V drive

Input capacitance Ciss=350pF (typ.)

Halogen free compliance

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

600

±30

DSS

GSS

Drain Current (Pulse)

PW 10 s, duty cycle 1%

≤

Allowable Power Dissipation

Channel Temperature

Tc=25 C

Tch

150

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

Note : 1 V =99V, L=5mH, I =5A (Fig.1)

2 L 5mH, Single pulse

≤

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: ATPAK

7057-001

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

ATP602-TL-H

Packing Type: TL

Marking

1.5

6.5

4.6

2.6

0.4

ATP602

LOT No.

Electrical Connection

2,4

0.55

0.8

0.6

1 : Gate

0.4

2.3

2 : Drain

3 : Source

4 : Drain

SANYO : ATPAK

http://semicon.sanyo.com/en/network

62712 TKIM/12710QB TKIM TC-00002087

No. A1543-1/7

12 3 4 5 6 7

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