Datasheet > ATP613_11

ATP613_11

更新时间： 2024-11-30 12:50:47

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
5页	392K
描述
General-Purpose Switching Device Applications

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中文翻译

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数据手册

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ATP613_11 数据手册

ATP613

Ordering number : ENA1903

SANYO Sem iconductors

DATA S HEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

ATP613

Features

•

Reverse recovery time t =60ns(typ.)

Input Capacitance Ciss=350pF(typ.)

Halogen free compliance

ON-resistance R (on)=1.55 (typ.)

10V drive

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

500

±30

5.5

DSS

Gate-to-Source Voltage

GSS

Drain Current (DC)

Drain Current (Pulse)

PW 10 s, duty cycle 1%

≤

Source-to-Drain Diode Forward Current (DC)

Source-to-Drain Diode Forward Current (Pulse)

Allowable Power Dissipation

Channel Temperature

5.5

PW 10 s, duty cycle 1%

≤

Tc=25 C

Tch

150

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

5.5

Note : 1 V =99V, L=5mH, I =5.5A

2 L 5mH, Single pulse (Fig.1)

≤

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: ATPAK

7057-001

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

1.5

6.5

4.6

2.6

Packing Type: TL

Marking

0.4

ATP613

LOT No.

Electrical Connection

0.55

0.8

2,4

0.6

1 : Gate

2 : Drain

0.4

2.3

3 : Source

4 : Drain

SANYO : ATPAK

http://semicon.sanyo.com/en/network

No. A1903-1/5

D1510QB TKIM TC-00002545

12 3 4 5

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