Datasheet > ATP304

ATP304

更新时间： 2024-11-27 12:54:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	385K
描述
P-Channel Power MOSFET -60V, -100A, 6.5mÎ©, ATPAK

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ATP304 数据手册

Ordering number : ENA2192

ATP304

P-Channel Power MOSFET

-60V, -100A, 6.5mΩ, ATPAK

http://onsemi.com

Features

• On-resistance R (on)1=5.0mΩ(typ.)

• Input Capacitance Ciss=13000pF(typ.)

• 4.5V drive

• Halogen Free compliance

Specifications

Absolute Maximum Ratings at Ta = 25°C

Parameter

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

-60

Unit

DSS

GSS

-100

-400

Drain Current (Pulse)

PW≤10μs, duty cycle≤1%

Tc=25°C

Allowable Power Dissipation

Channel Temperature

°C

Tch

150

Storage Temperature

Tstg

- 55 to +150

656

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

-75

Note : *1 V =-36V, L=100μH, I =-75A

*2 L≤100μH, Single pulse

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

unit : mm (typ)

7057-001

Ordering & Package Information

Shipping

Device

Package

note

Pb-Free

and

3,000

pcs. / reel

ATP304-TL-H

ATPAK

Halogen-Free

ATP304-TL-H

Packing Type: TL

Marking

1.5

6.5

4.6

2.6

0.4

ATP304

LOT No.

0.55

Electrical Connection

0.8

0.6

1: Gate

0.4

2,4

2: Drain

3: Source

4: Drain

2.3

ATPAK

Semiconductor Components Industries, LLC, 2013

June, 2013

60513 TKIM TC-00002952 No.A2192-1/6

12 3 4 5 6

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