Datasheet > ATP401-TL-H

ATP401-TL-H

更新时间： 2024-11-25 01:21:51

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描述
N-Channel Power MOSFET

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数据手册

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ATP401-TL-H 数据手册

Ordering number : ENA2167

ATP401

N-Channel Power MOSFET

http://onsemi.com

60V, 100A, 3.7m , ATPAK

Features

•

ON-resistance R (on)1=2.8m (typ)

4.5V Drive

Input Capasitance Ciss=17000pF(typ)

Halogen free compliance

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

±20

100

400

DSS

GSS

Drain Current (Pulse)

PW 10 s, duty cycle 1%

≤

Allowable Power Dissipation

Channel Temperature

Tc=25 C

Tch

150

Storage Temperature

Tstg

--55 to +150

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

549

1 V =36V, L=100 H, I =70A(Fig.1)

2 L 100 H, Single pulse

≤

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: ATPAK

7057-001

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

ATP401-TL-H

1.5

Packing Type: TL

Marking

6.5

4.6

2.6

0.4

ATP401

LOT No.

Electrical Connection

2,4

0.55

0.8

0.6

1 : Gate

0.4

2.3

2 : Drain

3 : Source

4 : Drain

ATPAK

Semiconductor Components Industries, LLC, 2013

July, 2013

12313 TKIM TC-00002868 No. A2167-1/7

12 3 4 5 6 7

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