生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.33 |
雪崩能效等级(Eas): | 10 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 35 A | 最大漏极电流 (ID): | 35 A |
最大漏源导通电阻: | 0.017 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 30 W |
最大脉冲漏极电流 (IDM): | 105 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ATP201_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
ATP201-TL-H | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
ATP202 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
ATP202_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
ATP202-TL-H | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
ATP202-TL-H | ONSEMI |
获取价格 |
N 沟道功率 MOSFET,30V,50A,12mΩ | |
ATP203 | SANYO |
获取价格 |
N-Channel Silicon MOSFET General-Purpose Switching Device Applications | |
ATP203_12 | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
ATP203-TL-H | SANYO |
获取价格 |
General-Purpose Switching Device Applications | |
ATP204 | SANYO |
获取价格 |
General-Purpose Switching Device Applications |