Datasheet > ATP208-TL-H

ATP208-TL-H

更新时间： 2023-09-03 20:39:59

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	339K
描述
N 沟道，功率 MOSFET，40V，90A，6mΩ

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数据手册

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ATP208-TL-H 数据手册

Ordering number : ENA1396A

ATP208

N-Channel Power MOSFET

http://onsemi.com

40V, 90A, 6m , Single ATPAK

Features

•

Low ON-resistance

4.5V drive

Halogen free compliance

Large current

Slim package

Protection diode in

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

DSS

±20

GSS

Drain Current (PW 10 s)

PW 10 s, duty cycle 1%

270

≤

Allowable Power Dissipation

Channel Temperature

Tc=25 C

150

Tch

Storage Temperature

Tstg

--55 to +150

155

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

Note : 1 V =15V, L=100 H, I =45A

2 L 100 H, Single pulse

≤

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Product & Package Information

Package Dimensions

unit : mm (typ)

• Package

: ATPAK

7057-001

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

ATP208-TL-H

Packing Type: TL

Marking

1.5

6.5

4.6

2.6

0.4

ATP208

LOT No.

Electrical Connection

2,4

0.55

0.8

0.6

1 : Gate

0.4

2.3

2 : Drain

3 : Source

4 : Drain

ATPAK

Semiconductor Components Industries, LLC, 2013

July, 2013

61312 TKIM/11409PA MS IM TC-00001776 No. A1396-1/7

12 3 4 5 6 7

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