是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | 0.300 INCH, GREEN, PLASTIC, MS-001BA, DIP-8 |
Reach Compliance Code: | compliant | Factory Lead Time: | 12 weeks |
风险等级: | 0.91 | Is Samacsys: | N |
备用内存宽度: | 8 | 数据保留时间-最小值: | 100 |
耐久性: | 1000000 Write/Erase Cycles | JESD-30 代码: | R-PDIP-T8 |
JESD-609代码: | e3 | 长度: | 9.271 mm |
内存密度: | 16384 bit | 内存集成电路类型: | EEPROM |
内存宽度: | 16 | 功能数量: | 1 |
端子数量: | 8 | 字数: | 1024 words |
字数代码: | 1000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 1KX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT APPLICABLE |
电源: | 2/5 V | 认证状态: | Not Qualified |
座面最大高度: | 5.334 mm | 串行总线类型: | MICROWIRE |
最大待机电流: | 1e-7 A | 子类别: | EEPROMs |
最大压摆率: | 0.002 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 1.8 V | 标称供电电压 (Vsup): | 2.7 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | INDUSTRIAL | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
宽度: | 7.62 mm | 最长写入周期时间 (tWC): | 10 ms |
写保护: | SOFTWARE | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
CAT93C86LE-1.8 | CATALYST |
功能相似 |
EEPROM, 1KX16, Serial, CMOS, PDIP8, LEAD AND HALOGEN FREE, PLASTIC, DIP-8 |
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