Datasheet > AT80N06S-Q1

AT80N06S-Q1

更新时间： 2024-11-25 18:07:11

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AT80N06S-Q1 数据手册

AT80N06S-Q1

N-Channel Enhancement Mode Power MOSFET

Product Summary

V_(BR)DSS

R_DS(on)MAX

8.0mΩ@10V

9.5mΩ@4.5V

I_D

60V

80A

Feature

Application

High density cell design for ultra low Rdson

PWM

Fully characterized avalanche voltage and current

Good stability and uniformity with high E_AS

Excellent package for good heat dissipation

Suffix "-Q1" for AEC-Q101

Load Switching

Package

Circuit diagram

TO-220AB

Marking

T80N06

XXXXX

Document ID

AS-1150145

Issued Date

2013/03/08

Revised Date

2022/05/16

Revision

Page.

Page 1

12 3 4 5 6

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