Datasheet > AT65-0233-TB

AT65-0233-TB

更新时间： 2024-02-08 17:59:40

品牌	Logo	应用领域
泰科 - TE		驱动器
页数	文件大小	规格书
3页	236K
描述
Digital Attenuator, 30 dB, 4-Bit, TTL Driver, DC-3.0 GHz

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技术参数
数据手册

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AT65-0233-TB 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.14	Is Samacsys：	N
其他特性：	TTL COMPATIBLE	标称衰减：	30 dB
特性阻抗：	50 Ω	构造：	COMPONENT
最大输入功率 (CW)：	33.98 dBm	最大插入损耗：	3.1 dB
最大工作频率：	3000 MHz	最小工作频率：
最高工作温度：	85 °C	最低工作温度：	-40 °C
射频/微波设备类型：	VARIABLE ATTENUATOR	最大电压驻波比：	1.7
Base Number Matches：	1

AT65-0233-TB 数据手册

Digital Attenuator, 30 dB, 4-Bit,

TTL Driver, DC-3.0 GHz

V 5.00

Features

SO-16

Attenuation: 2.0 dB steps to 30 dB

Low DC Power Consumption

Integral TTL Driver

50 Ohm Impedance

Temperature Stability: ±0.18 dB from -55°C to +85°C

Typ.

Description

M/A-COM’s AT65-0233 is a GaAs FET 4-bit digital

attenuator with a 2.0 dB minimum step size and a 30 dB

total attenuation range. This device is in a SOIC-16 plastic

surface mount package. The AT65-0233 is ideally suited for

use where accuracy, fast speed, very low power

consumption and low costs are required. Typical

applications include dynamic range setting in precision

receiver circuits and other gain/leveling control circuits.

Electrical Specifications: T_A= 25°C

Parameter

Test Conditions

Frequency

Units

Min.

Typ.

Max.

Insertion Loss

—

DC - 0.5 GHz

DC - 2.0 GHz

DC - 3.0 GHz

—

1.7

2.3

2.6

2.0

2.7

3.1

Attenuation Accuracy

VSWR

Any Bit or Combination of Bits

Full Range

DC - 3.0 GHz

± (.4 + 8% of attenuation)

Ratio

—

1.7:1

Trise, Tfall

Ton, Toff

Transients

10% to 90%

50% Cntl to 90%/10% RF

In-Band

Input Power

—

4.5

-8.0

0.0

2.0

—

150

—

5.5

-4.75

0.8

5.0

4.0

dBm

µA

1 dB Compression

0.05 GHz

0.5 - 3.0 GHz

0.05 GHz

0.5 - 3.0 GHz

0.05 GHz

0.5 - 3.0 GHz

+20

+28

+40

+50

+45

+68

5.0

-5.0

—

Input IP₃

Input IP₂

Two-tone inputs up to +5 dBm

VCC

-VEE

Vctl

—

Logic (0) TTL

Logic (1) TTL

0 to 0.8 V

2.0 to 5.0 V

VCC = 4.5 to 5.5 V

Input Leakage Current (Low)

Input Leakage Current (High)

Icc

µA

-Iee

VEE = -5.0 to –8.0 V

—

-1

12 3

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