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AT49LD3200-10TI PDF预览

AT49LD3200-10TI

更新时间: 2024-12-01 03:15:03
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
39页 449K
描述
32-megabit (1M x 32 or 2M x 16) High-speed Synchronous Flash Memory

AT49LD3200-10TI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP2, TSSOP86,.46,20
针数:56Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.92最长访问时间:170 ns
备用内存宽度:16启动块:INDEPENDENT
命令用户界面:NO数据轮询:YES
JESD-30 代码:R-PDSO-G86JESD-609代码:e0
长度:22.22 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:32
湿度敏感等级:3功能数量:1
部门数/规模:8端子数量:86
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX32
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSSOP86,.46,20封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:256K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.15 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
切换位:NO类型:NOR TYPE
宽度:10.16 mmBase Number Matches:1

AT49LD3200-10TI 数据手册

 浏览型号AT49LD3200-10TI的Datasheet PDF文件第2页浏览型号AT49LD3200-10TI的Datasheet PDF文件第3页浏览型号AT49LD3200-10TI的Datasheet PDF文件第4页浏览型号AT49LD3200-10TI的Datasheet PDF文件第5页浏览型号AT49LD3200-10TI的Datasheet PDF文件第6页浏览型号AT49LD3200-10TI的Datasheet PDF文件第7页 
Features  
3.0V to 3.6V Read/Write  
Burst Read Performance  
– <100 MHz (RAS Latency = 2, CAS Latency = 6), 10 ns Cycle Time  
tSAC = 7 ns  
– <75 MHz (RAS Latency = 2, CAS Latency = 5), 13 ns Cycle Time  
tSAC = 8 ns  
– <50 MHz (RAS Latency = 1, CAS Latency = 4), 20 ns Cycle Time  
t
SAC = 9 ns  
MRS Cycle with Address Key Programs  
– RAS Latency (1 and 2)  
– CAS Latency (2 ~ 8)  
– Burst Length: 4, 8  
– Burst Type: Sequential and Interleaved  
Word Selectable Organization  
32-megabit  
(1M x 32 or  
2M x 16)  
– 16 (Word Mode)/x 32 (Double Word Mode)  
Sector Erase Architecture  
High-speed  
Synchronous  
Flash Memory  
– Eight 256K Word or 128K Double Word (4-Mbit) Sectors  
Independent Asynchronous Boot Block  
– 8K x 16 Bits with Hardware Lockout  
Fast Program Time  
– 3-volt, 100 µs per Word/Double Word Typical  
– 12-volt, 30 µs per Word/Double Word Typical  
Fast Sector Erase Time  
– 2.5 Seconds at 3 Volts  
– 1.6 Seconds at 12 Volts  
Low-power Operation  
– ICC Read = 75 mA Typical  
Input and Output Pin Continuity Test Mode Optimizes Off-board Programming  
Package:  
– 86-pin TSOP Type II with Off-center Parting Line (OCPL) for Improved Reliability  
LVTTL-compatible Inputs and Outputs  
AT49LD3200  
AT49LD3200B  
SFlash™  
Description  
The AT49LD3200 or AT49LD3200B SFlashis a synchronous, high-bandwidth Flash  
memory fabricated with Atmel’s high-performance CMOS process technology and is  
organized either as 2,097,152 x 16 bits (word mode) or as 1,048,576 x 32 bits (double  
word mode), depending on the polarity of the WORD pin (see Pin Function Descrip-  
tion Table). Synchronous design allows precise cycle control. I/O transactions are  
possible on every clock cycle. All operations are synchronized to the rising edge of the  
system clock. The range of operating frequencies, programmable burst length and  
programmable latencies allow the same device to be useful for a variety of high-band-  
width, high-performance memory system applications.  
The AT49LD3200B will automatically activate the Asynchronous Boot Block after  
power-up, whereas with the AT49LD3200, the Asynchronous Boot Block can be acti-  
vated through Mode Register Set.  
The synchronous DRAM interface allows designers to maximize system performance  
while eliminating the need to shadow slow asynchronous Flash memory into high-  
speed RAM.  
The 32-megabit SFlash device is designed to sit on the synchronous memory bus and  
operate alongside SDRAM.  
Rev. 1940B–FLASH–11/01  

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