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AT49BV002AT-70JU PDF预览

AT49BV002AT-70JU

更新时间： 2024-11-11 03:13:55
品牌 Logo 应用领域
爱特美尔 - ATMEL 内存集成电路
页数 文件大小 规格书
19页 261K
描述
Flash, 256KX8, 70ns, PQCC32, PLASTIC, MS-016AE, LCC-32

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中文翻译

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AT49BV002AT-70JU 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：QFJ包装说明：PLASTIC, MS-016AE, LCC-32
针数：32Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.32.00.51
风险等级：5.82最长访问时间：70 ns
启动块：TOP命令用户界面：YES
数据轮询：YES耐久性：10000 Write/Erase Cycles
JESD-30 代码：R-PQCC-J32JESD-609代码：e3
长度：13.97 mm内存密度：2097152 bit
内存集成电路类型：FLASH内存宽度：8
湿度敏感等级：2功能数量：1
部门数/规模：1,2,1,3端子数量：32
字数：262144 words字数代码：256000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：256KX8
封装主体材料：PLASTIC/EPOXY封装代码：QCCJ
封装等效代码：LDCC32,.5X.6封装形状：RECTANGULAR
封装形式：CHIP CARRIER并行/串行：PARALLEL
峰值回流温度（摄氏度）：245电源：3/3.3 V
编程电压：2.7 V认证状态：Not Qualified
座面最大高度：3.556 mm部门规模：16K,8K,32K,64K
最大待机电流：0.00005 A子类别：Flash Memories
最大压摆率：0.05 mA最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：2.7 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Matte Tin (Sn)
端子形式：J BEND端子节距：1.27 mm
端子位置：QUAD处于峰值回流温度下的最长时间：40
切换位：YES类型：NOR TYPE
宽度：11.43 mmBase Number Matches：1

AT49BV002AT-70JU 数据手册

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Features  
• Single Supply for Read and Write: 2.7 to 3.6V  
• Fast Read Access Time – 70 ns  
• Internal Program Control and Timer  
• Sector Architecture  
– One 16K Bytes Boot Block with Programming Lockout  
– Two 8K Bytes Parameter Blocks  
– Four Main Memory Blocks (One 32K Bytes, Three 64K Bytes)  
• Fast Erase Cycle Time – 4 Seconds  
• Byte-by-Byte Programming – 30 µs/Byte Typical  
• Hardware Data Protection  
• DATA Polling for End of Program Detection  
• Low Power Dissipation  
2-megabit  
(256K x 8)  
– 15 mA Active Current  
Single 2.7-volt  
Battery-Voltage  
Flash Memory  
– 50 µA CMOS Standby Current  
• Typical 10,000 Write Cycles  
• Green (Pb/Halide-free) Packaging Option  
1. Description  
The AT49BV002A(N)(T) is a 2.7-volt-only in-system reprogrammable Flash Memory.  
Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with  
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to  
70 ns with power dissipation of just 54 mW over the industrial temperature range.  
AT49BV002A  
AT49BV002AN  
AT49BV002AT  
AT49BV002ANT  
When the device is deselected, the CMOS standby current is less than 50 µA. For the  
AT49BV002AN(T) pin 1 for PLCC package and pin 9 for the TSOP package are no  
connect pins. To allow for simple in-system reprogrammability, the  
AT49BV002A(N)(T) does not require high input voltages for programming. Five-volt-  
only commands determine the read and programming operation of the device. Read-  
ing data out of the device is similar to reading from an EPROM; it has standard CE,  
OE, and WE inputs to avoid bus contention. Reprogramming the AT49BV002A(N)(T)  
is performed by erasing a block of data and then programming on a byte by byte  
basis. The byte programming time is a fast 30 µs. The end of a program cycle can be  
optionally detected by the DATA polling feature. Once the end of a byte program cycle  
has been detected, a new access for a read or program can begin. The typical num-  
ber of program and erase cycles is in excess of 10,000 cycles.  
Not  
Recommended  
for New Design  
The device is erased by executing the erase command sequence; the device inter-  
nally controls the erase operations. There are two 8K byte parameter block sections,  
four main memory blocks, and one boot block.  
The device has the capability to protect the data in the boot block; this feature is  
enabled by a command sequence. The 16K-byte boot block section includes a repro-  
gramming lock out feature to provide data integrity. The boot sector is designed to  
contain user secure code, and when the feature is enabled, the boot sector is pro-  
tected from being reprogrammed.  
In the AT49BV002AN(T), once the boot block programming lockout feature is  
enabled, the contents of the boot block are permanent and cannot be changed. In the  
AT49BV002A(T), once the boot block programming lockout feature is enabled, the  
contents of the boot block cannot be changed with input voltage levels of 5.5 volts or  
less.  
3353G–FLASH–8/05  
1234567...19

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与AT49BV002AT-70JU相关器件

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AT49BV002AT-70TI ATMEL

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 		Flash, 256KX8, 70ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
AT49BV002AT-70TJ ATMEL

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 		Flash, 256KX8, 70ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
AT49BV002AT-70TL ATMEL

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 		Flash, 256KX8, 70ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
AT49BV002AT-70VC ATMEL

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 		Flash, 256KX8, 70ns, PDSO32, 8 X 14 MM, PLASTIC, MO-142BA, VSOP1-32
AT49BV002AT-70VI ATMEL

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 		Flash, 256KX8, 70ns, PDSO32, 8 X 14 MM, PLASTIC, MO-142BA, VSOP1-32
AT49BV002AT-70VJ ATMEL

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 		Flash, 256KX8, 70ns, PDSO32, 8 X 14 MM, PLASTIC, MO-142BA, VSOP1-32
AT49BV002AT-70VL ATMEL

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 		Flash, 256KX8, 70ns, PDSO32, 8 X 14 MM, PLASTIC, MO-142BA, VSOP1-32
AT49BV002N ATMEL

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 		2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49BV002N-12JC ATMEL

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 		2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory
AT49BV002N-12JI ATMEL

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 		2-Megabit 256K x 8 Single 2.7-Volt Battery-Voltage Flash Memory

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