AT45DQ321
32-Mbit DataFlash (with Extra 1-Mbits), 2.3V or 2.5V Minimum
SPI Serial Flash Memory with Dual-I/O and Quad-I/O Support
ADVANCE DATASHEET
Features
Single 2.3V - 3.6V or 2.5V - 3.6V supply
Serial Peripheral Interface (SPI) compatible
Supports SPI modes 0 and 3
Supports RapidS™ operation
Supports Dual-input and Quad-input Buffer Write
Supports Dual-output and Quad-output Read
Very high operating frequencies
85MHz (for SPI)
85MHz (for Dual-I/O and Quad-I/O)
Clock-to-output time (tV) of 6ns maximum
User configurable page size
512 bytes per page
528 bytes per page (default)
Page size can be factory pre-configured for 512 bytes
Two fully independent SRAM data buffers (512/528 bytes)
Allows receiving data while reprogramming the main memory array
Flexible programming options
Byte/Page Program (1 to 512/528 bytes) directly into main memory
Buffer Write
Buffer to Main Memory Page Program
Flexible erase options
Page Erase (512/528 bytes)
Block Erase (4KB)
Sector Erase (64KB)
Chip Erase (32-Mbits)
Program and Erase Suspend/Resume
Advanced hardware and software data protection features
Individual sector protection
Individual sector lockdown to make any sector permanently read-only
128-byte, One-Time Programmable (OTP) Security Register
64 bytes factory programmed with a unique identifier
64 bytes user programmable
Hardware and software controlled reset options
JEDEC Standard Manufacturer and Device ID Read
Low-power dissipation
500nA Ultra-Deep Power-Down current (typical)
3μA Deep Power-Down current (typical)
25μA Standby current (typical)
11mA Active Read current (typical at 20MHz)
Endurance: 100,000 program/erase cycles per page minimum
Data retention: 20 years
Complies with full industrial temperature range
Green (Pb/Halide-free/RoHS compliant) packaging options
8-lead SOIC (0.208" wide)
8-pad Ultra-thin DFN (5 x 6 x 0.6mm)
9-ball Ultra-thin UBGA (6 x 6 x 0.6mm)
DS-45DQ321-031B–DFLASH–5/2013