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AT29LV512-25TI PDF预览

AT29LV512-25TI

更新时间: 2024-11-07 22:53:59
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
10页 459K
描述
512K 64K x 8 3-volt Only CMOS Flash Memory

AT29LV512-25TI 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:TSOP1, TSSOP32,.8,20
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.88最长访问时间:250 ns
命令用户界面:NO数据轮询:YES
耐久性:10000 Write/Erase CyclesJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:18.4 mm
内存密度:524288 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:3
功能数量:1部门数/规模:512
端子数量:32字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP32,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
页面大小:128 words并行/串行:PARALLEL
峰值回流温度(摄氏度):240电源:3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:128
最大待机电流:0.00005 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:8 mm最长写入周期时间 (tWC):20 ms
Base Number Matches:1

AT29LV512-25TI 数据手册

 浏览型号AT29LV512-25TI的Datasheet PDF文件第2页浏览型号AT29LV512-25TI的Datasheet PDF文件第3页浏览型号AT29LV512-25TI的Datasheet PDF文件第4页浏览型号AT29LV512-25TI的Datasheet PDF文件第5页浏览型号AT29LV512-25TI的Datasheet PDF文件第6页浏览型号AT29LV512-25TI的Datasheet PDF文件第7页 
AT29LV512  
Features  
Single Supply Voltage, Range 3V to 3.6V  
3-Volt-Only Read and Write Operation  
Software Protected Programming  
Low Power Dissipation  
15 mA Active Current  
20 µA CMOS Standby Current  
Fast Read Access Time - 200 ns  
Sector Program Operation  
Single Cycle Reprogram (Erase and Program)  
512 Sectors (128 bytes/sector)  
512K (64K x 8)  
3-volt Only  
CMOS Flash  
Memory  
Internal Address and Data Latches for 128-Bytes  
Fast Sector Program Cycle Time - 20 ms Max.  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
Description  
The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read only  
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Manu-  
factured with Atmel’s advanced nonvolatile CMOS technology, the device offers ac-  
cess times to 200 ns with power dissipation of just 54 mW over the commercial tem-  
perature range. When the device is deselected, the CMOS standby current is less  
than 20 µA. The device endurance is such that any sector can typically be written to  
in excess of 10,000 times.  
(continued)  
Pin Configurations  
Pin Name Function  
AT29LV512  
PLCC Top View  
A0 - A15  
CE  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
NC No Connect  
TSOP Top View  
Type 1  
0177I  
4-43  

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