Datasheet > AT29C512-70PI

AT29C512-70PI

更新时间： 2024-09-18 23:32:39

品牌	Logo	应用领域
其他 - ETC		闪存
页数	文件大小	规格书
16页	203K
描述
512K (64K x 8) 5-volt Only Flash Memory(200.86 k)

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AT29C512-70PI 数据手册

Features

• Fast Read Access Time - 70 ns

• 5-Volt Only Reprogramming

• Sector Program Operation

– Single Cycle Reprogram (Erase and Program)

– 512 Sectors (128 bytes/sector)

– Internal Address and Data Latches for 128 Bytes

• Internal Program Control and Timer

• Hardware and Software Data Protection

• Fast Sector Program Cycle Time - 10 ms

• DATA Polling for End of Program Detection

• Low Power Dissipation

– 50 mA Active Current

– 100 µA CMOS Standby Current

• Typical Endurance > 10,000 Cycles

• Single 5V ± 10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• Commercial and Industrial Temperature Ranges

512K (64K x 8)

5-volt Only

Flash Memory

AT29C512

Description

The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only

memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-

ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 70 ns with power dissipation of just 275 mW over the commercial tem-

perature range. When the device is deselected, the CMOS standby current is less

than 100 µA. The device endurance is such that any sector can typically be written to

in excess of 10,000 times.

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Pin Configurations

DIP Top View

Pin Name

A0 - A15

Function

A15

A12

32 VCC

31 WE

Addresses

30 NC

29 A14

28 A13

27 A8

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

26 A9

25 A11

24 OE

23 A10

22 CE

21 I/O7

20 I/O6

19 I/O5

18 I/O4

17 I/O3

A2 10

A1 11

I/O0 - I/O7

A0 12

I/O0 13

I/O1 14

I/O2 15

GND 16

TSOP Top View

Type 1

PLCC Top View

A11

A10

A13

A14

VCC

A15

A12

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0