Datasheet > 存储 > 闪存> AT29C512-90

AT29C512-90

更新时间： 2024-11-23 22:11:23

品牌	Logo	应用领域
爱特美尔 - ATMEL		闪存
页数	文件大小	规格书
18页	285K
描述
512K 64K x 8 5-volt Only CMOS Flash Memory

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数据手册

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AT29C512-90 数据手册

Features

• Fast Read Access Time – 70 ns

• 5-volt Only Reprogramming

• Sector Program Operation

– Single Cycle Reprogram (Erase and Program)

– 512 Sectors (128 Bytes/Sector)

– Internal Address and Data Latches for 128 Bytes

• Internal Program Control and Timer

• Hardware and Software Data Protection

• Fast Sector Program Cycle Time – 10 ms

• DATA Polling for End of Program Detection

• Low Power Dissipation

512K (64K x 8)

5-volt Only

Flash Memory

– 50 mA Active Current

– 100 µA CMOS Standby Current

• Typical Endurance > 10,000 Cycles

• Single 5V 10ꢀ Supply

AT29C512

• CMOS and TTL Compatible Inputs and Outputs

• Commercial and Industrial Temperature Ranges

• Green (Pb/Halide-free) Packaging Option

1. Description

The AT29C512 is a 5-volt only in-system Flash programmable and erasable read only

memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-

ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 70 ns with power dissipation of just 275 mW over the commercial tem-

perature range. When the device is deselected, the CMOS standby current is less

than 100 µA. The device endurance is such that any sector can typically be written to

in excess of 10,000 times.

To allow for simple in-system reprogrammability, the AT29C512 does not require high

input voltages for programming. Five-volt-only commands determine the operation of

the device. Reading data out of the device is similar to reading from an EPROM.

Reprogramming the AT29C512 is performed on a sector basis; 128 bytes of data are

loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 128 bytes of data are internally

latched, freeing the address and data bus for other operations. Following the initiation

of a program cycle, the device will automatically erase the sector and then program

the latched data using an internal control timer. The end of a program cycle can be

detected by DATA polling of I/O7. Once the end of a program cycle has been

detected, a new access for a read or program can begin.

0456H–FLASH–2/05

12 3 4 5 6 7...18

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与AT29C512-90相关器件

型号	品牌	获取价格	描述	数据表
AT29C512-90DC	ETC	获取价格	x8 Flash EEPROM
AT29C512-90DI	ETC	获取价格	x8 Flash EEPROM
AT29C512-90JC	ATMEL	获取价格	512K (64K x 8) 5-volt Only Flash Memory
AT29C512-90JI	ATMEL	获取价格	512K (64K x 8) 5-volt Only Flash Memory
AT29C512-90JU	ATMEL	获取价格	512K (64K x 8) 5-volt Only Flash Memory
AT29C512-90PC	ATMEL	获取价格	512K 64K x 8 5-volt Only CMOS Flash Memory
AT29C512-90PI	ATMEL	获取价格	512K 64K x 8 5-volt Only CMOS Flash Memory
AT29C512-90TC	ATMEL	获取价格	512K (64K x 8) 5-volt Only Flash Memory
AT29C512-90TCT/R	ATMEL	获取价格	Flash, 64KX8, 90ns, PDSO32, PLASTIC, TSOP-32
AT29C512-90TI	ATMEL	获取价格	512K (64K x 8) 5-volt Only Flash Memory