Datasheet > AT29C010A_02

AT29C010A_02

更新时间： 2024-11-23 04:33:11

品牌	Logo	应用领域
爱特美尔 - ATMEL		闪存
页数	文件大小	规格书
18页	214K
描述
1-Megabit (128K x 8) 5-volt Only Flash Memory

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AT29C010A_02 数据手册

Features

• Fast Read Access Time – 70 ns

• 5-volt Only Reprogramming

• Sector Program Operation

– Single Cycle Reprogram (Erase and Program)

– 1024 Sectors (128 Bytes/sector)

– Internal Address and Data Latches for 128 Bytes

• Two 8K Bytes Boot Blocks with Lockout

• Internal Program Control and Timer

• Hardware and Software Data Protection

• Fast Sector Program Cycle Time – 10 ms

• DATA Polling for End of Program Detection

• Low Power Dissipation

1-Megabit

(128K x 8)

– 50 mA Active Current

– 100 µA CMOS Standby Current

5-volt Only

Flash Memory

• Typical Endurance > 10,000 Cycles

• Single 5V ±ꢀ10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• Commercial and Industrial Temperature Ranges

Description

AT29C010A

The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read

only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device

offers access times to 70 ns with power dissipation of just 275 mW over the commer-

cial temperature range. When the device is deselected, the CMOS standby current is

DIP Top View

Pin Configurations

Pin Name

A0 - A16

Function

A16

A15

A12

32 VCC

31 WE

30 NC

29 A14

28 A13

27 A8

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

26 A9

25 A11

24 OE

23 A10

22 CE

21 I/O7

20 I/O6

19 I/O5

18 I/O4

17 I/O3

A2 10

A1 11

I/O0 - I/O7

A0 12

I/O0 13

I/O1 14

I/O2 15

GND 16

TSOP Top View

Type 1

PLCC Top View

A11

A10

A13

A14

VCC

A16

A15

A12

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0