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AT29C010A-12TU PDF预览

AT29C010A-12TU

更新时间: 2024-11-10 20:07:43
品牌 Logo 应用领域
爱特美尔 - ATMEL 光电二极管内存集成电路
页数 文件大小 规格书
18页 426K
描述
Flash, 128KX8, 120ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32

AT29C010A-12TU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.61最长访问时间:120 ns
JESD-30 代码:R-PDSO-G32JESD-609代码:e3
长度:18.4 mm内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:3功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP1
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):260
编程电压:5 V认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
类型:NOR TYPE宽度:8 mm
最长写入周期时间 (tWC):10 msBase Number Matches:1

AT29C010A-12TU 数据手册

 浏览型号AT29C010A-12TU的Datasheet PDF文件第2页浏览型号AT29C010A-12TU的Datasheet PDF文件第3页浏览型号AT29C010A-12TU的Datasheet PDF文件第4页浏览型号AT29C010A-12TU的Datasheet PDF文件第5页浏览型号AT29C010A-12TU的Datasheet PDF文件第6页浏览型号AT29C010A-12TU的Datasheet PDF文件第7页 
Features  
Fast Read Access Time – 70 ns  
5-volt Only Reprogramming  
Sector Program Operation  
– Single Cycle Reprogram (Erase and Program)  
– 1024 Sectors (128 Bytes/Sector)  
– Internal Address and Data Latches for 128 Bytes  
Two 8K Bytes Boot Blocks with Lockout  
Internal Program Control and Timer  
Hardware and Software Data Protection  
Fast Sector Program Cycle Time – 10 ms  
DATA Polling for End of Program Detection  
Low Power Dissipation  
1-megabit  
(128K x 8)  
5-volt Only  
Flash Memory  
– 50 mA Active Current  
– 100 µA CMOS Standby Current  
Typical Endurance > 10,000 Cycles  
Single 5V 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
Commercial and Industrial Temperature Ranges  
Green (Pb/Halide-free) Packaging Option  
AT29C010A  
1. Description  
The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read  
only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by  
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device  
offers access times to 70 ns with power dissipation of just 275 mW over the commer-  
cial temperature range. When the device is deselected, the CMOS standby current is  
less than 100 µA. The device endurance is such that any sector can typically be writ-  
ten to in excess of 10,000 times.  
To allow for simple in-system reprogrammability, the AT29C010A does not require  
high input voltages for programming. Five-volt-only commands determine the opera-  
tion of the device. Reading data out of the device is similar to reading from an  
EPROM. Reprogramming the AT29C010A is performed on a sector basis; 128 bytes  
of data are loaded into the device and then simultaneously programmed.  
During a reprogram cycle, the address locations and 128 bytes of data are internally  
latched, freeing the address and data bus for other operations. Following the initiation  
of a program cycle, the device will automatically erase the sector and then program  
the latched data using an internal control timer. The end of a program cycle can be  
detected by DATA polling of I/O7. Once the end of a program cycle has been  
detected, a new access for a read or program can begin.  
0394H–FLASH–2/05  

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