Datasheet > AT28HC64B_08

AT28HC64B_08

更新时间： 2024-12-01 06:38:19

品牌	Logo	应用领域
爱特美尔 - ATMEL		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
18页	322K
描述
64K (8K x 8) High Speed Parallel EEPROM with Page Write and Software Data Protection

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AT28HC64B_08 数据手册

Features

• Fast Read Access Time – 70 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

• Fast Write Cycle Times

– Page Write Cycle Time: 10 ms Maximum (Standard)

2 ms Maximum (Option – Ref. AT28HC64BF Datasheet)

– 1 to 64-byte Page Write Operation

• Low Power Dissipation

64K (8K x 8)

High Speed

Parallel

– 40 mA Active Current

– 100 µA CMOS Standby Current

• Hardware and Software Data Protection

• DATA Polling and Toggle Bit for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 100,000 Cycles

EEPROM with

Page Write and

Software Data

Protection

– Data Retention: 10 Years

• Single 5 V ±10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-wide Pinout

• Industrial Temperature Ranges

• Green (Pb/Halide-free) Packaging Option

1. Description

AT28HC64B

The AT28HC64B is a high-performance electrically-erasable and programmable read-

only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 55 ns with power dissipation of just 220 mW. When the device is

deselected, the CMOS standby current is less than 100 µA.

The AT28HC64B is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 64-byte page register to allow

writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to

64 bytes of data are internally latched, freeing the address and data bus for other

operations. Following the initiation of a write cycle, the device will automatically write

the latched data using an internal control timer. The end of a write cycle can be

detected by DATA polling of I/O7. Once the end of a write cycle has been detected, a

new access for a read or write can begin.

Atmel’s AT28HC64B has additional features to ensure high quality and manufactura-

bility. The device utilizes internal error correction for extended endurance and

improved data retention characteristics. An optional software data protection mecha-

nism is available to guard against inadvertent writes. The device also includes an

extra 64 bytes of EEPROM for device identification or tracking.

0274K–PEEPR–8/08

12 3 4 5 6 7...18

中文翻译

下载PDF

与AT28HC64B_08相关器件

型号	品牌	获取价格	描述	数据表
AT28HC64B_09	ATMEL	获取价格	64K (8K x 8) High-speed Parallel EEPROM with Page Write and Software Data Protection
AT28HC64B-120	ATMEL	获取价格	64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection
AT28HC64B-120DC	ETC	获取价格	EEPROM\|8KX8\|CMOS\|DIP\|28PIN\|CERAMIC
AT28HC64B-120DI	ETC	获取价格	EEPROM\|8KX8\|CMOS\|DIP\|28PIN\|CERAMIC
AT28HC64B-120DM/883	ETC	获取价格	EEPROM\|8KX8\|CMOS\|DIP\|28PIN\|CERAMIC
AT28HC64B-120JC	ETC	获取价格	EEPROM\|8KX8\|CMOS\|LDCC\|32PIN\|PLASTIC
AT28HC64B-120JI	ETC	获取价格	EEPROM\|8KX8\|CMOS\|LDCC\|32PIN\|PLASTIC
AT28HC64B-120PC	ETC	获取价格	EEPROM\|8KX8\|CMOS\|DIP\|28PIN\|PLASTIC
AT28HC64B-120PI	ETC	获取价格	EEPROM\|8KX8\|CMOS\|DIP\|28PIN\|PLASTIC
AT28HC64B-120SC	ETC	获取价格	EEPROM\|8KX8\|CMOS\|SOP\|28PIN\|PLASTIC

与AT28HC64B_08相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

AT28HC64B_08

AT28HC64B_08 数据手册

与AT28HC64B_08相关器件

与AT28HC64B_08相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AT28HC64B_08

AT28HC64B_08 数据手册

与AT28HC64B_08相关器件

与AT28HC64B_08相关文章

您还可以找

您在本页遇到什么问题？