Datasheet > AT28HC64B-12PL

AT28HC64B-12PL

更新时间： 2024-12-02 03:18:19

品牌	Logo	应用领域
爱特美尔 - ATMEL		可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数	文件大小	规格书
19页	306K
描述
EEPROM, 8KX8, 120ns, Parallel, CMOS, PDIP28, 0.600 INCH, PLASTIC, MS-011AB, DIP-28

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中文翻译

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数据手册

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AT28HC64B-12PL 数据手册

Features

• Fast Read Access Time – 55 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

• Fast Write Cycle Times

– Page Write Cycle Time: 10 ms Maximum (Standard)

2 ms Maximum (Option)

– 1 to 64-byte Page Write Operation

• Low Power Dissipation

64K (8K x 8)

High Speed

Parallel

– 40 mA Active Current

– 100 µA CMOS Standby Current

• Hardware and Software Data Protection

• DATA Polling and Toggle Bit for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 100,000 Cycles

EEPROM with

Page Write and

Software Data

Protection

– Data Retention: 10 Years

• Single 5 V 10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-wide Pinout

• Commercial and Industrial Temperature Ranges

• Green (Pb/Halide-free) Packaging Option

1. Description

AT28HC64B

The AT28HC64B is a high-performance electrically-erasable and programmable read-

only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 55 ns with power dissipation of just 220 mW. When the device is

deselected, the CMOS standby current is less than 100 µA.

The AT28HC64B is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 64-byte page register to allow

writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to

64 bytes of data are internally latched, freeing the address and data bus for other

operations. Following the initiation of a write cycle, the device will automatically write

the latched data using an internal control timer. The end of a write cycle can be

detected by DATA polling of I/O7. Once the end of a write cycle has been detected, a

new access for a read or write can begin.

Atmel’s AT28HC64B has additional features to ensure high quality and manufactura-

bility. The device utilizes internal error correction for extended endurance and

improved data retention characteristics. An optional software data protection mecha-

nism is available to guard against inadvertent writes. The device also includes an

extra 64 bytes of EEPROM for device identification or tracking.

0274H–PEEPR–4/05

12 3 4 5 6 7...19

中文翻译

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与AT28HC64B-12PL相关器件

型号	品牌	获取价格	描述	数据表
AT28HC64B-12PU	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PDIP28, 15.24MM, PLASTIC, MS-011AB, DIP-28
AT28HC64B-12SC	ATMEL	获取价格	64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection
AT28HC64B-12SCT/R	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOIC-28
AT28HC64B-12SI	ATMEL	获取价格	64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection
AT28HC64B-12SIT/R	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOIC-28
AT28HC64B-12SJ	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, MS-013, SOIC-28
AT28HC64B-12SJT/R	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOIC-28
AT28HC64B-12SL	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, MS-013, SOIC-28
AT28HC64B-12SLT/R	ATMEL	获取价格	EEPROM, 8KX8, 120ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOIC-28
AT28HC64B-12SU	ATMEL	获取价格	64K (8K x 8) High-speed Parallel EEPROM with Page Write and Software Data Protection

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