AT28HC256N

更新时间： 2024-11-29 04:33:11

品牌	Logo	应用领域
爱特美尔 - ATMEL		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
13页	230K
描述
256 (32K x 8) High-speed Parallel EEPROM

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中文翻译

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数据手册

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AT28HC256N 数据手册

Features

• Fast Read Access Time – 90 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

– Internal Control Timer

• Fast Write Cycle Times

– Page Write Cycle Time: 3 ms Maximum

– 1 to 64-byte Page Write Operation

• Low Power Dissipation: 300 µA Standby Current (CMOS)

• Hardware and Software Data Protection

• DATA Polling for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 10⁵Cycles

– Data Retention: 10 Years

• Single 5V 10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-wide Pinout

256 (32K x 8)

High-speed

Parallel

EEPROM

Description

The AT28HC256N is a high-performance electrically erasable and programmable read

only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-

tured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256N offers

access times to 90 ns with power dissipation of just 440 mW. When the AT28HC256N

is deselected, the standby current is less than 3 mA.

AT28HC256N

The AT28HC256N is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 64-byte page register to allow

writing of up to 64 bytes simultaneously. During a write cycle, the address and 1 to 64

bytes of data are internally latched, freeing the addresses and data bus for other oper-

ations. Following the initiation of a write cycle, the device will automatically write the

latched data using an internal control timer. The end of a write cycle can be detected

by DATA Polling of I/O₇. Once the end of a write cycle has been detected a new

access for a read or write can begin.

Atmel’s AT28HC256N has additional features to ensure high quality and manufactura-

bility. The device utilizes internal error correction for extended endurance and

improved data retention characteristics. An optional software data protection mecha-

nism is available to guard against inadvertent writes. The device also includes an extra

64 bytes of EEPROM for device identification or tracking.

LCC, PLCC

Top View

Pin Configurations

Pin Name

A0 - A14

Function

Addresses

29 A8

28 A9

27 A11

26 NC

25 OE

24 A10

23 CE

22 I/O7

21 I/O6

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

A1 10

A0 11

I/O0 - I/O7

NC 12

I/O0 13

3446B–PEEPR–4/04

12 3 4 5 6 7...13

中文翻译

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与AT28HC256N相关器件

型号	品牌	获取价格	描述	数据表
AT28HC256N-12JI	ATMEL	获取价格	256 (32K x 8) High-speed Parallel EEPROM
AT28HC256N-12TI	ATMEL	获取价格	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, MO-183, TSOP1-28
AT28HC256N-90JI	ATMEL	获取价格	256 (32K x 8) High-speed Parallel EEPROM
AT28HC256N-90TI	ATMEL	获取价格	EEPROM, 32KX8, 90ns, Parallel, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, MO-183, TSOP1-28
AT28HC256NE-12JI	ATMEL	获取价格	EEPROM, 32KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, MS-016AE, LCC-32
AT28HC256NE-12TI	ATMEL	获取价格	EEPROM, 32KX8, 120ns, Parallel, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, MO-183, TSOP1-28
AT28HC256NE-90TI	ATMEL	获取价格	EEPROM, 32KX8, 90ns, Parallel, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, MO-183, TSOP1-28
AT28HC256NF-12JI	ATMEL	获取价格	EEPROM, 32KX8, 120ns, Parallel, CMOS, PQCC32, PLASTIC, MS-016AE, LCC-32
AT28HC256-W	ATMEL	获取价格	EEPROM, 120ns, Parallel, CMOS
AT28HC291-35DC	ATMEL	获取价格	EEPROM, 2KX8, 35ns, Parallel, CMOS, CDIP24, 0.300 INCH, CERDIP-24

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