AT28HC256E-90SI

更新时间： 2024-01-05 00:40:11

品牌	Logo	应用领域
爱特美尔 - ATMEL		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
25页	610K
描述
256 (32K x 8) High-speed Parallel EEPROM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

AT28HC256E-90SI 数据手册

Features

• Fast Read Access Time – 70 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

– Internal Control Timer

• Fast Write Cycle Times

– Page Write Cycle Time: 3 ms or 10 ms Maximum

– 1 to 64-byte Page Write Operation

• Low Power Dissipation

256 (32K x 8)

High-speed

Parallel

– 80 mA Active Current

– 3 mA Standby Current

• Hardware and Software Data Protection

• DATA Polling for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 10⁴or 10⁵Cycles

– Data Retention: 10 Years

EEPROM

• Single 5V 10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-wide Pinout

• Full Military and Industrial Temperature Ranges

• Green (Pb/Halide-free) Packaging Option

AT28HC256

1. Description

The AT28HC256 is a high-performance electrically erasable and programmable read-

only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-

tured with Atmel’s advanced nonvolatile CMOS technology, the AT28HC256 offers

access times to 70 ns with power dissipation of just 440 mW. When the AT28HC256

is deselected, the standby current is less than 5 mA.

The AT28HC256 is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 64-byte page register to allow

writing of up to 64 bytes simultaneously. During a write cycle, the address and 1 to 64

bytes of data are internally latched, freeing the addresses and data bus for other oper-

ations. Following the initiation of a write cycle, the device will automatically write the

latched data using an internal control timer. The end of a write cycle can be detected

by DATA Polling of I/O7. Once the end of a write cycle has been detected a new

access for a read or write can begin.

Atmel’s 28HC256 has additional features to ensure high quality and manufacturability.

The device utilizes internal error correction for extended endurance and improved

data retention characteristics. An optional software data protection mechanism is

available to guard against inadvertent writes. The device also includes an extra

64 bytes of EEPROM for device identification or tracking.

0007L–PEEPR–03/08

12 3 4 5 6 7...25

中文翻译

下载PDF

与AT28HC256E-90SI相关器件

型号	品牌	获取价格	描述	数据表
AT28HC256E-90SU	ATMEL	获取价格	EEPROM, 32KX8, 90ns, Parallel, CMOS, PDSO28, 0.300 INCH, GREEN, PLASTIC, MS-013, SOIC-28
AT28HC256E-90TC	ETC	获取价格	x8 EEPROM
AT28HC256E-90TI	ATMEL	获取价格	256 (32K x 8) High-speed Parallel EEPROM
AT28HC256E-90TU-T	MICROCHIP	获取价格	EEPROM, 32KX8, 90ns, Parallel, CMOS, PDSO28
AT28HC256E-90UC	ETC	获取价格	x8 EEPROM
AT28HC256E-90UI	ATMEL	获取价格	EEPROM, 32KX8, 90ns, Parallel, CMOS, CPGA28, CERAMIC, PGA-28
AT28HC256E-90UM/883	ATMEL	获取价格	256 32K x 8 High Speed Parallel EEPROMs
AT28HC256E-90UM/883	MICROCHIP	获取价格	IC EEPROM 256KBIT 90NS 28CPGA
AT28HC256F	ATMEL	获取价格	256 32K x 8 High Speed CMOS E2PROM
AT28HC256F-12DC	ETC	获取价格	x8 EEPROM

与AT28HC256E-90SI相关文章

Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

2
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

13
解读L9904TR手册资料：产品概述、主要功能、电气参数
2024-08-20

24
芯片底部填充工艺：提升电子设备可靠性的关键步骤
2024-08-14

83

产品中心

服务支持

精选活动

关于我们

帮助中心

AT28HC256E-90SI

AT28HC256E-90SI 数据手册

与AT28HC256E-90SI相关器件

与AT28HC256E-90SI相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

AT28HC256E-90SI

AT28HC256E-90SI 数据手册

与AT28HC256E-90SI相关器件

与AT28HC256E-90SI相关文章

您还可以找

您在本页遇到什么问题？