Datasheet > AT28C256F-15JU-T

AT28C256F-15JU-T

更新时间： 2024-11-10 03:56:11

品牌	Logo	应用领域
美国微芯 - MICROCHIP		可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数	文件大小	规格书
25页	659K
描述
150NS PLCC IND TEMP GREEN

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技术参数
数据手册

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AT28C256F-15JU-T 技术参数

生命周期：	Active	包装说明：	QCCJ,
Reach Compliance Code：	compliant	风险等级：	1.44
最长访问时间：	150 ns	JESD-30 代码：	R-PQCC-J32
长度：	13.97 mm	内存密度：	262144 bit
内存集成电路类型：	EEPROM	内存宽度：	8
功能数量：	1	端子数量：	32
字数：	32768 words	字数代码：	32000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	32KX8
封装主体材料：	PLASTIC/EPOXY	封装代码：	QCCJ
封装形状：	RECTANGULAR	封装形式：	CHIP CARRIER
并行/串行：	PARALLEL	编程电压：	5 V
座面最大高度：	3.556 mm	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	J BEND
端子节距：	1.27 mm	端子位置：	QUAD
宽度：	11.43 mm	最长写入周期时间 (tWC)：	3 ms
Base Number Matches：	1

AT28C256F-15JU-T 数据手册

Features

• Fast Read Access Time – 150 ns

• Automatic Page Write Operation

– Internal Address and Data Latches for 64 Bytes

– Internal Control Timer

• Fast Write Cycle Times

– Page Write Cycle Time: 3 ms or 10 ms Maximum

– 1 to 64-byte Page Write Operation

• Low Power Dissipation

256K (32K x 8)

Paged Parallel

EEPROM

– 50 mA Active Current

– 200 µA CMOS Standby Current

• Hardware and Software Data Protection

• DATA Polling for End of Write Detection

• High Reliability CMOS Technology

– Endurance: 10⁴or 10⁵Cycles

– Data Retention: 10 Years

AT28C256

• Single 5V ± 10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-wide Pinout

• Full Military and Industrial Temperature Ranges

• Green (Pb/Halide-free) Packaging Option

1. Description

The AT28C256 is a high-performance electrically erasable and programmable read-

only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-

tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access

times to 150 ns with power dissipation of just 440 mW. When the device is deselected,

the CMOS standby current is less than 200 µA.

The AT28C256 is accessed like a Static RAM for the read or write cycle without the

need for external components. The device contains a 64-byte page register to allow

writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to

64 bytes of data are internally latched, freeing the address and data bus for other

operations. Following the initiation of a write cycle, the device will automatically write

the latched data using an internal control timer. The end of a write cycle can be

detected by DATA Polling of I/O7. Once the end of a write cycle has been detected a

new access for a read or write can begin.

Atmel’s AT28C256 has additional features to ensure high quality and manufacturabil-

ity. The device utilizes internal error correction for extended endurance and improved

data retention characteristics. An optional software data protection mechanism is

available to guard against inadvertent writes. The device also includes an extra

64 bytes of EEPROM for device identification or tracking.

0006M–PEEPR–12/09

12 3 4 5 6 7...25

中文翻译

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与AT28C256F-15JU-T相关器件

型号	品牌	获取价格	描述	数据表
AT28C256F-15LC	ETC	获取价格	x8 EEPROM
AT28C256F-15LI	ETC	获取价格	x8 EEPROM
AT28C256F-15LM	ETC	获取价格	x8 EEPROM
AT28C256F-15LM/883	ATMEL	获取价格	256K 32K x 8 Paged CMOS E2PROM
AT28C256F-15PC	ATMEL	获取价格	256K 32K x 8 Paged CMOS E2PROM
AT28C256F-15PI	ATMEL	获取价格	256K 32K x 8 Paged CMOS E2PROM
AT28C256F-15PL	ATMEL	获取价格	EEPROM, 32KX8, 150ns, Parallel, CMOS, PDIP28, 0.600 INCH, PLASTIC, MS-011AB, DIP-28
AT28C256F-15PU	ATMEL	获取价格	EEPROM, 32KX8, 150ns, Parallel, CMOS, PDIP28, 0.600 INCH, GREEN, PLASTIC, MS-011AB, DIP-28
AT28C256F-15SC	ATMEL	获取价格	256K 32K x 8 Paged CMOS E2PROM
AT28C256F-15SCT/R	ATMEL	获取价格	EEPROM, 32KX8, 150ns, Parallel, CMOS, PDSO28, 0.300 INCH, PLASTIC, SOIC-28

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