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AT28C256E-15JU PDF预览

AT28C256E-15JU

更新时间: 2024-11-06 14:26:31
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
25页 530K
描述
IC EEPROM 256KBIT 150NS 32PLCC

AT28C256E-15JU 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:QCCJ, LDCC32,.5X.6
Reach Compliance Code:compliantFactory Lead Time:7 weeks
风险等级:2.09最长访问时间:150 ns
其他特性:AUTOMATIC WRITE命令用户界面:NO
数据轮询:YES数据保留时间-最小值:10
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
JESD-609代码:e3长度:13.97 mm
内存密度:262144 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:2
功能数量:1端子数量:32
字数:32768 words字数代码:32000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
页面大小:64 words并行/串行:PARALLEL
峰值回流温度(摄氏度):245电源:5 V
编程电压:5 V认证状态:Not Qualified
筛选级别:MIL-STD-883座面最大高度:3.556 mm
最大待机电流:0.0002 A子类别:EEPROMs
最大压摆率:0.05 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn) - annealed
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD处于峰值回流温度下的最长时间:40
切换位:YES宽度:11.43 mm
最长写入周期时间 (tWC):10 ms写保护:HARDWARE/SOFTWARE
Base Number Matches:1

AT28C256E-15JU 数据手册

 浏览型号AT28C256E-15JU的Datasheet PDF文件第2页浏览型号AT28C256E-15JU的Datasheet PDF文件第3页浏览型号AT28C256E-15JU的Datasheet PDF文件第4页浏览型号AT28C256E-15JU的Datasheet PDF文件第5页浏览型号AT28C256E-15JU的Datasheet PDF文件第6页浏览型号AT28C256E-15JU的Datasheet PDF文件第7页 
Features  
Fast Read Access Time – 150 ns  
Automatic Page Write Operation  
– Internal Address and Data Latches for 64 Bytes  
– Internal Control Timer  
Fast Write Cycle Times  
– Page Write Cycle Time: 3 ms or 10 ms Maximum  
– 1 to 64-byte Page Write Operation  
Low Power Dissipation  
256K (32K x 8)  
Paged Parallel  
EEPROM  
– 50 mA Active Current  
– 200 µA CMOS Standby Current  
Hardware and Software Data Protection  
DATA Polling for End of Write Detection  
High Reliability CMOS Technology  
– Endurance: 104 or 105 Cycles  
– Data Retention: 10 Years  
AT28C256  
Single 5V ± 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
JEDEC Approved Byte-wide Pinout  
Full Military and Industrial Temperature Ranges  
Green (Pb/Halide-free) Packaging Option  
1. Description  
The AT28C256 is a high-performance electrically erasable and programmable read-  
only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-  
tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access  
times to 150 ns with power dissipation of just 440 mW. When the device is deselected,  
the CMOS standby current is less than 200 µA.  
The AT28C256 is accessed like a Static RAM for the read or write cycle without the  
need for external components. The device contains a 64-byte page register to allow  
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to  
64 bytes of data are internally latched, freeing the address and data bus for other  
operations. Following the initiation of a write cycle, the device will automatically write  
the latched data using an internal control timer. The end of a write cycle can be  
detected by DATA Polling of I/O7. Once the end of a write cycle has been detected a  
new access for a read or write can begin.  
Atmel’s AT28C256 has additional features to ensure high quality and manufacturabil-  
ity. The device utilizes internal error correction for extended endurance and improved  
data retention characteristics. An optional software data protection mechanism is  
available to guard against inadvertent writes. The device also includes an extra  
64 bytes of EEPROM for device identification or tracking.  
0006M–PEEPR–12/09  

AT28C256E-15JU 替代型号

型号 品牌 替代类型 描述 数据表
AT28C256-15JU ATMEL

完全替代

EEPROM, 32KX8, 150ns, Parallel, CMOS, PQCC32, GREEN, PLASTIC, MS-016AE, LCC-32
AT28C256F-15JU ATMEL

完全替代

EEPROM, 32KX8, 150ns, Parallel, CMOS, PQCC32, GREEN, PLASTIC, MS-016AE, LCC-32

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