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AT27BV800-12RC PDF预览

AT27BV800-12RC

更新时间: 2024-11-06 22:27:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 电池可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
11页 264K
描述
8-Megabit 512K x 16 or 1024K x 8 Unregulated Battery-Voltage High Speed OTP EPROM

AT27BV800-12RC 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SOP, SOP44,.63针数:44
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.71风险等级:5.31
最长访问时间:120 ns其他特性:CAN ALSO BE OPERATED AT 4.5V TO 5.5V RANGE
备用内存宽度:8I/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:28.195 mm内存密度:8388608 bit
内存集成电路类型:OTP ROM内存宽度:16
功能数量:1端子数量:44
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP44,.63
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3/5 V认证状态:Not Qualified
座面最大高度:2.77 mm最大待机电流:0.00002 A
子类别:OTP ROMs最大压摆率:0.04 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:13.34 mm
Base Number Matches:1

AT27BV800-12RC 数据手册

 浏览型号AT27BV800-12RC的Datasheet PDF文件第2页浏览型号AT27BV800-12RC的Datasheet PDF文件第3页浏览型号AT27BV800-12RC的Datasheet PDF文件第4页浏览型号AT27BV800-12RC的Datasheet PDF文件第5页浏览型号AT27BV800-12RC的Datasheet PDF文件第6页浏览型号AT27BV800-12RC的Datasheet PDF文件第7页 
Features  
Read Access Time - 120 ns  
Word-wide or Byte-wide Configurable  
Dual Voltage Range Operation  
– Unregulated Battery Power Supply Range, 2.7V to 3.6V  
or Standard 5V ± 10% Supply Range  
8-Megabit Flash and Mask ROM Compatable  
Low Power CMOS Operation  
– 20 µA Maximum Standby  
– 10 mA Max. Active at 5 MHz for VCC = 3.6V  
JEDEC Standard Packages  
8-Megabit  
(512K x 16 or  
1024K x 8)  
– 44-Lead PLCC  
– 44-Lead SOIC (SOP)  
– 48-Lead TSOP (12 mm x 20 mm)  
High Reliability CMOS Technology  
– 2,000 ESD Protection  
– 200 mA Latchup Immunity  
RapidProgramming Algorithm - 50 µs/word (typical)  
CMOS and TTL Compatible Inputs and Outputs  
– JEDEC Standard for LVTTL and LVBO  
Integrated Product Identification Code  
Commercial and Industrial Temperature Ranges  
Unregulated  
Battery-Voltage™  
High Speed  
OTP EPROM  
Description  
The AT27BV800 is a high performance low-power, low-voltage 8,388,608-bit one time  
programmable read only memory (OTP EPROM) organized as either 512K by 16 or  
1024K by 8 bits. It requires only one supply in the range of 2.7 to 3.6V in normal read  
AT27BV800  
Preliminary  
(continued)  
PLCC  
Pin Configurations  
Pin Name Function  
A4  
A3  
A2  
7
8
9
39 A12  
38 A13  
37 A14  
36 A15  
35 A16  
34 BYTE/VPP  
33 GND  
32 O15/A-1  
31 O7  
A0 - A18  
O0 - O15  
O15/A-1  
Addresses  
Outputs  
A1 10  
A0 11  
CE 12  
GND 13  
OE 14  
O0 15  
O8 16  
O1 17  
Output/Address  
Byte Mode/  
Program Supply  
BYTE/VPP  
30 O14  
29 O6  
CE  
OE  
NC  
Chip Enable  
Output Enable  
No Connect  
AT27BV800  
Preliminary  
TSOP  
Type 1  
SOIC (SOP)  
A15  
1
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
A16  
BYTE/VPP  
GND  
O15/A-1  
O7  
A14  
A13  
A12  
A11  
A10  
A9  
2
NC  
A18  
A17  
A7  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
NC  
3
2
NC  
4
3
A8  
5
6
O14  
O6  
4
A9  
7
A6  
5
A10  
A11  
A12  
A13  
A14  
A15  
A16  
BYTE/VPP  
GND  
O15/A-1  
O7  
A8  
8
O13  
O5  
A5  
6
NC  
NC  
NC  
NC  
NC  
NC  
NC  
A18  
A17  
A7  
9
A4  
7
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
O12  
O4  
A3  
8
A2  
9
VCC  
O11  
O3  
A1  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
A0  
CE  
GND  
OE  
O0  
O10  
O2  
O9  
O1  
O8  
O14  
O6  
A6  
O8  
O1  
A5  
O0  
O9  
O13  
O5  
A4  
OE  
O2  
A3  
GND  
CE  
Rev. 0988B–03/98  
O10  
O3  
O12  
O4  
A2  
A1  
A0  
O11  
VCC  

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