是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | DIP |
包装说明: | DIP, DIP8,.3 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.51 | 风险等级: | 4.58 |
最大时钟频率 (fCLK): | 1 MHz | 数据保留时间-最小值: | 100 |
耐久性: | 1000000 Write/Erase Cycles | I2C控制字节: | 1010DDMR |
JESD-30 代码: | R-PDIP-T8 | JESD-609代码: | e3 |
长度: | 9.27 mm | 内存密度: | 4096 bit |
内存集成电路类型: | EEPROM | 内存宽度: | 8 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 512 words | 字数代码: | 512 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 512X8 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP8,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | SERIAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 2/5 V |
认证状态: | Not Qualified | 座面最大高度: | 5.33 mm |
串行总线类型: | I2C | 最大待机电流: | 0.000003 A |
子类别: | EEPROMs | 最大压摆率: | 0.003 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 1.8 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 7.62 mm |
最长写入周期时间 (tWC): | 5 ms | 写保护: | HARDWARE |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
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