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AT24C02C-STPD-TVAO PDF预览

AT24C02C-STPD-TVAO

更新时间: 2024-11-21 14:50:19
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
30页 504K
描述
EEPROM, 256X8, Serial, CMOS, PDSO8

AT24C02C-STPD-TVAO 技术参数

生命周期:Active包装说明:TSSOP,
Reach Compliance Code:compliant风险等级:5.68
最大时钟频率 (fCLK):0.1 MHzJESD-30 代码:R-PDSO-G8
长度:4.4 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:8
字数:256 words字数代码:256
工作模式:SYNCHRONOUS组织:256X8
封装主体材料:PLASTIC/EPOXY封装代码:TSSOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL筛选级别:AEC-Q100; TS 16949
座面最大高度:1.2 mm串行总线类型:I2C
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS端子形式:GULL WING
端子节距:0.65 mm端子位置:DUAL
宽度:3 mm最长写入周期时间 (tWC):1.5 ms
Base Number Matches:1

AT24C02C-STPD-TVAO 数据手册

 浏览型号AT24C02C-STPD-TVAO的Datasheet PDF文件第2页浏览型号AT24C02C-STPD-TVAO的Datasheet PDF文件第3页浏览型号AT24C02C-STPD-TVAO的Datasheet PDF文件第4页浏览型号AT24C02C-STPD-TVAO的Datasheet PDF文件第5页浏览型号AT24C02C-STPD-TVAO的Datasheet PDF文件第6页浏览型号AT24C02C-STPD-TVAO的Datasheet PDF文件第7页 
24C02C  
2K 5.0V I2CSerial EEPROM  
Features:  
Description:  
• Single-Supply with Operation from 4.5V to 5.5V  
• Low-Power CMOS Technology:  
The Microchip Technology Inc. 24C02C is a 2K bit  
Serial Electrically Erasable PROM with a voltage range  
of 4.5V to 5.5V. The device is organized as a single  
block of 256 x 8-bit memory with a 2-wire serial  
interface. Low-current design permits operation with  
max. standby and active currents of only 5 μA and 1  
mA, respectively. The device has a page write capabil-  
ity for up to 16 bytes of data and has fast write cycle  
times of only 1 ms for both byte and page writes.  
Functional address lines allow the connection of up to  
eight 24C02C devices on the same bus for up to 16K  
bits of contiguous EEPROM memory. The device is  
available in the standard 8-pin PDIP, 8-pin SOIC (3.90  
mm), 8-pin 2x3 DFN and TDFN, 8-pin MSOP and  
TSSOP packages.  
- Read current 1 mA, max.  
- Standby current 5 μA, max.  
• 2-Wire Serial Interface, I2C™ Compatible  
• Cascadable up to Eight Devices  
• Schmitt Trigger Inputs for Noise Suppression  
• Output Slope Control to Eliminate Ground Bounce  
• 100 kHz and 400 kHz Clock Compatibility  
• Fast Page or Byte Write Time 1 ms, typical  
• Self-Timed Erase/Write Cycle  
• 16-Byte Page Write Buffer  
• Hardware Write-Protect for Upper Half of the  
Array (80h-FFh)  
Block Diagram  
• ESD Protection >4,000V  
• More than 1 Million Erase/Write Cycles  
• Data Retention >200 Years  
WP  
A0 A1 A2  
HV Generator  
• Factory Programming Available  
• Packages Include 8-lead PDIP, SOIC, TSSOP,  
DFN, TDFN and MSOP  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
EEPROM  
Array  
• Pb-Free and RoHS Compliant  
Temperature ranges:  
XDEC  
- Industrial (I):  
- Automotive (E):  
-40°C to +85°C  
-40°C to +125°C  
SDA  
SCL  
Write-Protect  
Circuitry  
Vcc  
Vss  
YDEC  
Sense Amp.  
R/W Control  
Package Types  
SOIC, TSSOP  
PDIP, MSOP  
DFN/TDFN  
1
A0  
A1  
VCC  
WP  
8
A0  
1
8
VCC  
1
2
8
7
A0  
A1  
VCC  
7
6
5
2
3
4
A1  
A2  
2
3
7
6
WP  
WP  
SCL  
SDA  
A2  
SCL  
VSS  
3
4
6
5
A2  
SCL  
SDA  
VSS  
4
5
SDA  
VSS  
© 2008 Microchip Technology Inc.  
DS21202J-page 1  

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