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AT24C02D-XHM-T PDF预览

AT24C02D-XHM-T

更新时间: 2024-11-21 15:44:23
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟双倍数据速率光电二极管内存集成电路
页数 文件大小 规格书
46页 1239K
描述
IC EEPROM 2KBIT 1MHZ 8TSSOP

AT24C02D-XHM-T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:TSSOP-8
Reach Compliance Code:compliantFactory Lead Time:10 weeks
风险等级:1.5其他特性:ALSO COMPATIBLE WITH 2.5 V AT 1 MHZ
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:100
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010DDDR
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:4.4 mm内存密度:2048 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:256 words
字数代码:256工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256X8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:1.8/3.3 V认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:I2C
最大待机电流:4e-7 A子类别:EEPROMs
最大压摆率:0.001 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWAREBase Number Matches:1

AT24C02D-XHM-T 数据手册

 浏览型号AT24C02D-XHM-T的Datasheet PDF文件第2页浏览型号AT24C02D-XHM-T的Datasheet PDF文件第3页浏览型号AT24C02D-XHM-T的Datasheet PDF文件第4页浏览型号AT24C02D-XHM-T的Datasheet PDF文件第5页浏览型号AT24C02D-XHM-T的Datasheet PDF文件第6页浏览型号AT24C02D-XHM-T的Datasheet PDF文件第7页 
AT24C01D/AT24C02D  
I²C-Compatible (Two-Wire) Serial EEPROM  
1Kbit (128 x 8), 2Kbit (256 x 8)  
Features  
Low-Voltage Operation:  
VCC = 1.7V to 3.6V  
Internally Organized as 128 x 8 (1K) or 256 x 8 (2K)  
Industrial Temperature Range: -40°C to +85°C  
I2C-Compatible (Two-Wire) Serial Interface:  
100 kHz Standard mode, 1.7V to 3.6V  
400 kHz Fast mode, 1.7V to 3.6V  
1 MHz Fast Mode Plus (FM+), 2.5V to 3.6V  
Schmitt Triggers, Filtered Inputs for Noise Suppression  
Bidirectional Data Transfer Protocol  
Write-Protect Pin for Full Array Hardware Data Protection  
Ultra Low Active Current (1 mA maximum) and Standby Current (0.8 μA maximum)  
8-Byte Page Write Mode:  
Partial page writes allowed  
Random and Sequential Read Modes  
Self-Timed Write Cycle within 5 ms Maximum  
ESD Protection > 4,000V  
High Reliability:  
Endurance: 1,000,000 write cycles  
Data retention: 100 years  
Green Package Options (Lead-free/Halide-free/RoHS compliant)  
Die Sale Options: Wafer Form and Bumped Wafers  
Packages  
8-Lead PDIP(1), 8-Lead SOIC, 5-Lead SOT23, 8-Lead TSSOP, 8-Pad UDFN and 8-Ball VFBGA  
Note:ꢀ  
1. Contact Microchip Sales for the availability of this package.  
DS20006100A-page 1  
Datasheet  
© 2018 Microchip Technology Inc.  
 
 
 

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