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AT-64020 PDF预览

AT-64020

更新时间: 2024-10-31 22:39:15
品牌 Logo 应用领域
安捷伦 - AGILENT 晶体小信号双极晶体管射频小信号双极晶体管放大器
页数 文件大小 规格书
4页 47K
描述
Up to 4 GHz Linear Power Silicon Bipolar Transistor

AT-64020 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:DISK BUTTON, O-MRDB-F4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.22
Is Samacsys:N其他特性:HIGH RELIABILITY
最大集电极电流 (IC):0.2 A集电极-发射极最大电压:20 V
配置:SINGLE最高频带:S BAND
JESD-30 代码:O-MRDB-F4JESD-609代码:e0
元件数量:1端子数量:4
最高工作温度:175 °C封装主体材料:METAL
封装形状:ROUND封装形式:DISK BUTTON
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子位置:RADIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

AT-64020 数据手册

 浏览型号AT-64020的Datasheet PDF文件第2页浏览型号AT-64020的Datasheet PDF文件第3页浏览型号AT-64020的Datasheet PDF文件第4页 
Up to 4 GHz Linear Power  
Silicon BipolarTransistor  
Technical Data  
AT-64020  
Features  
Description  
200 mil BeO Package  
• High Output Power:  
27.5dBmTypicalP1dB at2.0 GHz  
26.5dBmTypicalP1dB at4.0 GHz  
The AT-64020 is a high perfor-  
mance NPN silicon bipolar  
transistor housed in a hermetic  
BeO disk package for good  
thermal characteristics. This  
device is designed for use in  
medium power, wide band  
amplifier and oscillator applica-  
tions operating over VHF, UHF  
and microwave frequencies.  
• High Gain at 1 dB  
Compression:  
10.0dBTypical  
6.5dBTypical  
G
1dBat2.0 GHz  
G1dBat4.0 GHz  
• 35% Total Efficiency  
• Emitter Ballast Resistors  
• Hermetic, Metal/Beryllia  
Package  
Excellent device uniformity,  
performance and reliability are  
produced by the use of ion-  
implantation, self-alignment  
techniques, and gold metallization  
in the fabrication of these devices.  
The use of ion-implanted ballast  
resistors ensures uniform current  
distribution through the multiple  
emitter fingers.  
4-179  
5965-8915E  

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