AT-36408

更新时间： 2024-11-26 22:47:55

品牌	Logo	应用领域
安捷伦 - AGILENT		晶体晶体管手机 GSM
页数	文件大小	规格书
8页	103K
描述
4.8 V NPN Common Emitter Output Power Transistor for GSM Class IV Phones

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中文翻译

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技术参数
数据手册

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AT-36408 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.68	最大集电极电流 (IC)：	1.7 A
最小直流电流增益 (hFE)：	80	JESD-609代码：	e0
最高工作温度：	150 °C	子类别：	Other Transistors
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

AT-36408 数据手册

4.8 V NPN Common Emitter

Output Power Transistor

for GSM Class IV Phones

Technical Data

AT-36408

Features

SOIC-8 Surface Mount

Plastic Package

Outline P8

Description

• 4.8 Volt Pulsed Operation

(pulse width = 577 µsec,

duty cycle = 12.5%)

HewlettPackard’sAT-36408

combines internal input pre-

matching with low cost, NPN

power silicon bipolar junction

transistors in a SOIC-8 surface

mount plastic package. This

device is designed for use as the

output device for GSM Class IV

handsets. At 4.8 volts, the device

features +35 dBm pulsed output

power, superior power added

efficiency, and excellent gain,

making the AT-36408 an excellent

choice for battery powered

systems.

• +35.0dBmP_out@900MHz,

Typ.

• 65% Collector Efficiency

@ 900MHz,Typ.

• 9 dB Power Gain @ 900 MHz,

Typ.

Pin Configuration

• Internal Input Pre-Matching

Facilitates Cascading

BASE

EMITTER

BASE

EMITTER

COLLECTOR

EMITTER

Applications

• Output Power Device for

GSM Class IV Handsets

COLLECTOR

EMITTER

The AT-36408 is fabricated with

Hewlett Packard’s 10 GHz F Self-

Aligned-Transistor (SAT) process.

The die are nitride passivated for

surface protection. Excellent

device uniformity, performance

and reliability are produced by the

use of ion-implantation, self-

alignment techniques, and gold

metalization in the fabrication of

these devices.

4-81

5965-5960E

12 3 4 5 6 7 8

中文翻译

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