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ASIBLX92A

更新时间: 2024-11-14 22:35:03
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 17K
描述
NPN SILICON RF POWER TRANSISTOR

ASIBLX92A 数据手册

  
BLX92A  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI BLX92A is Designed for  
transmitting applications in class-A, B  
or C with a supply voltage up to 28 V  
PACKAGE STYLE .280 4L STUD  
A
45°  
C
FEATURES:  
B
E
E
B
High Gain - 11.0 dB Min.  
Omnigold™ Metallization System  
C
D
J
E
I
F
G
MAXIMUM RATINGS  
H
K
#8-32 UNC  
0.7 A  
65 V  
IC  
VCB  
PDISS  
TJ  
MINIMUM  
inches / mm  
MAXIMUM  
inches / mm  
DIM  
1.010 / 25.65  
.220 / 5.59  
.270 / 6.86  
.003 / 0.08  
.117 / 2.97  
1.055 / 26.80  
.230 /5.84  
.285 / 7.24  
.007 / 0.18  
.137 / 3.48  
A
B
C
D
E
F
G
H
I
6.0 W @ TC = 25 °C  
-65 to +200 °C  
-65 to +150 °C  
9.8 °C/W  
.572 / 14.53  
.130 / 3.30  
.245 / 6.22  
.255 / 6.48  
TSTG  
θJC  
.640 / 16.26  
.175 / 4.45  
.275 / 6.99  
.217 / 5.51  
.285 / 7.24  
J
K
NONE  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCBO  
BVCES  
BVCEO  
BVEBO  
hFE  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 10 mA  
IC = 10 mA  
IC = 25 mA  
IE = 1.0 mA  
VCE = 5.0 V  
65  
65  
33  
4.0  
10  
V
V
V
V
IC = 100 mA  
IC = 100 mA  
---  
fT  
VCE = 5.0 V  
1.2  
6.5  
25  
GHz  
pF  
Cc  
Ce  
V
CB = 10 V  
EB = 0 V  
f = 1.0 MHz  
f = 1.0 MHz  
V
pF  
11  
60  
PG  
dB  
%
VCE = 28 V  
POUT = 2.5 W  
f = 470 MHz  
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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