Datasheet > ASIBLV30

ASIBLV30

更新时间： 2024-11-14 22:05:07

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	17K
描述
NPN SILICON RF POWER TRANSISTOR

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数据手册

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ASIBLV30 数据手册

BLV30

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI BLV30 is Designed for

Television Band IV & V Applications

up to 860 MHz.

PACKAGE STYLE .280 4L STUD

45°

FEATURES:

• Common Emitter

• P_G= 10 dB at 2.0 W/860 MHz

• Omnigold™ Metalization System

MAXIMUM RATINGS

1.5 A

60 V

I_C

#8-32 UNC

V_CBO

V_CEO

V_EBO

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

1.010 / 25.65

.220 / 5.59

.270 / 6.86

.003 / 0.08

.117 / 2.97

1.055 / 26.80

.230 /5.84

.285 / 7.24

.007 / 0.18

.137 / 3.48

30 V

4.0 V

15.9 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

10 ^OC/W

.572 / 14.53

.130 / 3.30

.245 / 6.22

.255 / 6.48

.640 / 16.26

.175 / 4.45

.275 / 6.99

.217 / 5.51

.285 / 7.24

T_STG

θ_JC

CHARACTERISTICS ^T_C= 25 ^O

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 10 mA

I_C= 50 mA

I_E= 4.0 mA

V_CB= 30 V

V_CE= 25 V

BV_CEO

BV_EBO

I_CBO

4.0

---

I_C= 500 mA

120

h_FE

V_CB= 28 V

V_CE= 25 V

f = 1.0 MHz

f = 860 MHz

C_OB

I_C= 410 mA

P_G

P_OUT= 2.0 W

-60

IMD₁

dBc

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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