Datasheet > AS7C33256PFS36A

AS7C33256PFS36A

更新时间： 2022-12-04 00:29:18

品牌	Logo	应用领域
ALSC		静态存储器
页数	文件大小	规格书
20页	528K
描述
3.3V 256K x 32/36 pipelined burst synchronous SRAM

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AS7C33256PFS36A 数据手册

AS7C33256PFS32A

AS7C33256PFS36A

Absolute maximum ratings

Parameter

Symbol

, V

Min

–0.5

–

Max

Unit

Power supply voltage relative to GND

Input voltage relative to GND (input pins)

Input voltage relative to GND (I/O pins)

Power dissipation

+4.6

DDQ

+ 0.5

DDQ

1.8

Short circuit output current

–

OUT

Storage temperature (plastic)

Temperature under bias

–65

+150

+135

stg

bias

*Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at

these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions may affect reli-

ability.

Recommended operating conditions at 3.3V I/O

Parameter

Supply voltage for inputs

Supply voltage for I/O

Ground supply

Symbol

V_DD

Min

3.135

Nominal

Max

3.465

Unit

3.3

V_DDQ

Vss

Recommended operating conditions at 2.5V I/O

Parameter

Supply voltage for inputs

Supply voltage for I/O

Ground supply

Symbol

V_DD

Min

3.135

2.375

Nominal

Max

3.465

2.625

Unit

3.3

2.5

V_DDQ

Vss

11/30/04, v.3.1

Alliance Semiconductor

P. 8 of 20

1...5 6 789 10 11...20

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AS7C33256PFS36A-100BC	ISSI	Standard SRAM, 256KX36, 12ns, CMOS, PBGA119, 14 X 20 MM, BGA-119	获取价格
AS7C33256PFS36A-100BI	ISSI	Standard SRAM, 256KX36, 12ns, CMOS, PBGA119, 14 X 20 MM, BGA-119	获取价格
AS7C33256PFS36A-133BC	ALSC	Standard SRAM, 256KX36, 10ns, CMOS, PBGA119, 14 X 20 MM, BGA-119	获取价格
AS7C33256PFS36A-133BI	ISSI	Standard SRAM, 256KX36, 10ns, CMOS, PBGA119, 14 X 20 MM, BGA-119	获取价格
AS7C33256PFS36A-133TQC	ALSC	3.3V 256K x 32/36 pipelined burst synchronous SRAM	获取价格
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