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AS7C251MPFD36A-133TQCN PDF预览

AS7C251MPFD36A-133TQCN

更新时间: 2024-11-27 20:31:03
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
19页 522K
描述
Standard SRAM, 1MX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100

AS7C251MPFD36A-133TQCN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.53
最长访问时间:3.8 ns其他特性:PIPELINED ARCHITECTURE
JESD-30 代码:R-PQFP-G100JESD-609代码:e3
长度:20 mm内存密度:37748736 bit
内存集成电路类型:STANDARD SRAM内存宽度:36
功能数量:1端子数量:100
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX36
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):245
认证状态:Not Qualified座面最大高度:1.6 mm
最大供电电压 (Vsup):2.625 V最小供电电压 (Vsup):2.375 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:MATTE TIN端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30宽度:14 mm
Base Number Matches:1

AS7C251MPFD36A-133TQCN 数据手册

 浏览型号AS7C251MPFD36A-133TQCN的Datasheet PDF文件第2页浏览型号AS7C251MPFD36A-133TQCN的Datasheet PDF文件第3页浏览型号AS7C251MPFD36A-133TQCN的Datasheet PDF文件第4页浏览型号AS7C251MPFD36A-133TQCN的Datasheet PDF文件第5页浏览型号AS7C251MPFD36A-133TQCN的Datasheet PDF文件第6页浏览型号AS7C251MPFD36A-133TQCN的Datasheet PDF文件第7页 
February 2005  
AS7C251MPFD32A  
AS7C251MPFD36A  
®
2.5V 1M × 32/36 pipelined burst synchronous SRAM  
Features  
• Individual byte write and global write  
• Multiple chip enables for easy expansion  
• 2.5V core power supply  
• Linear or interleaved burst control  
• Snooze mode for reduced power-standby  
• Common data inputs and data outputs  
• Organization: 1,048,576 words × 32 or 36 bits  
• Fast clock speeds to 200 MHz  
• Fast clock to data access: 3.1/3.5/3.8 ns  
• Fast OE access time: 3.1/3.5/3.8 ns  
• Fully synchronous register-to-register operation  
• Double-cycle deselect  
• Asynchronous output enable control  
• Available in 100-pin TQFP package  
Logic block diagram  
LBO  
CLK  
ADV  
ADSC  
ADSP  
CLK  
CE  
CLR  
Q0  
Burst logic  
1M × 32/36  
Q1  
Memory  
array  
2
2
D
CE  
CLK  
Q
A[19:0]  
Address  
20  
20  
18  
20  
register  
32/36  
32/36  
GWE  
BWE  
BWd  
D
Q
DQd  
Byte write  
registers  
CLK  
D
Q
DQc  
Byte write  
registers  
BWc  
BWb  
CLK  
D
Q
DQb  
Byte write  
registers  
CLK  
D
Q
DQa  
Byte write  
registers  
4
BWa  
CLK  
CE0  
CE1  
OE  
Output  
registers  
D
Q
Q
CE2  
Input  
registers  
CLK  
Enable  
register  
CE  
CLK  
CLK  
D
Enable  
Power  
down  
delay  
register  
CLK  
ZZ  
32/36  
DQ[a:d]  
OE  
Selection guide  
-200  
5
-166  
-133  
7.5  
Units  
ns  
Minimum cycle time  
6
Maximum clock frequency  
Maximum clock access time  
Maximum operating current  
Maximum standby current  
200  
3.1  
450  
170  
90  
166  
3.5  
400  
150  
90  
133  
3.8  
MHz  
ns  
350  
140  
90  
mA  
mA  
mA  
Maximum CMOS standby current (DC)  
2/11/05, v.1.1  
Alliance Semiconductor  
1 of 19  
Copyright © Alliance Semiconductor. All rights reserved.  

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