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AS7C251MNTD36A-200BC PDF预览

AS7C251MNTD36A-200BC

更新时间: 2022-12-01 19:15:46
品牌 Logo 应用领域
ALSC 静态存储器
页数 文件大小 规格书
22页 453K
描述
ZBT SRAM, 1MX36, 6.5ns, CMOS, PBGA165, BGA-165

AS7C251MNTD36A-200BC 数据手册

 浏览型号AS7C251MNTD36A-200BC的Datasheet PDF文件第4页浏览型号AS7C251MNTD36A-200BC的Datasheet PDF文件第5页浏览型号AS7C251MNTD36A-200BC的Datasheet PDF文件第6页浏览型号AS7C251MNTD36A-200BC的Datasheet PDF文件第8页浏览型号AS7C251MNTD36A-200BC的Datasheet PDF文件第9页浏览型号AS7C251MNTD36A-200BC的Datasheet PDF文件第10页 
AS7C251MNTD32A  
AS7C251MNTD36A  
®
State diagram for NTD SRAM  
Burst  
Read  
Burst  
Read  
Read  
Burst  
Read  
Dsel  
Dsel  
Burst  
Burst  
Write  
Burst  
Write  
Burst  
Write  
Write  
Absolute maximum ratings  
Parameter  
Power supply voltage relative to GND  
Input voltage relative to GND (input pins)  
Input voltage relative to GND (I/O pins)  
Power dissipation  
Symbol  
Min  
Max  
+3.6  
Unit  
V
VDD, VDDQ  
VIN  
–0.3  
–0.3  
–0.3  
VDD + 0.3  
VDDQ + 0.3  
1.8  
V
VIN  
V
Pd  
W
Short circuit output current  
IOUT  
20  
mA  
oC  
oC  
oC  
Storage temperature (TQFP)  
Storage temperature (BGA)  
Tstg (TQFP)  
Tstg (BGA)  
Tbias  
–65  
–65  
–65  
+150  
+125  
Temperature under bias  
+135  
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional  
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to  
absolute maximum rating conditions may affect reliability.  
Recommended operating conditions  
Parameter  
Supply voltage for inputs  
Supply voltage for I/O  
Ground supply  
Symbol  
VDD  
Min  
2.375  
2.375  
0
Nominal  
Max  
2.625  
2.625  
0
Unit  
V
2.5  
2.5  
0
VDDQ  
Vss  
V
V
4/26/04, V 1.0  
Alliance Semiconductor  
P. 7 of 22  

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