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AS7C251MNTD32A-167TQIN PDF预览

AS7C251MNTD32A-167TQIN

更新时间: 2024-01-21 09:59:11
品牌 Logo 应用领域
ALSC 时钟ISM频段静态存储器内存集成电路
页数 文件大小 规格书
22页 453K
描述
ZBT SRAM, 1MX32, 7.5ns, CMOS, PQFP100, 14 X 20 MM, LEAD-FREE, TQFP-100

AS7C251MNTD32A-167TQIN 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP, QFP100,.63X.87
针数:100Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.77最长访问时间:7.5 ns
其他特性:FLOW-THROUGH OR PIPELINED ARCHITECTURE最大时钟频率 (fCLK):167 MHz
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
JESD-609代码:e3/e6长度:20 mm
内存密度:33554432 bit内存集成电路类型:ZBT SRAM
内存宽度:32功能数量:1
端子数量:100字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX32输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:2.5 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.06 A最小待机电流:2.38 V
子类别:SRAMs最大压摆率:0.35 mA
最大供电电压 (Vsup):2.625 V最小供电电压 (Vsup):2.375 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:PURE MATTE TIN/TIN BISMUTH端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:40宽度:14 mm
Base Number Matches:1

AS7C251MNTD32A-167TQIN 数据手册

 浏览型号AS7C251MNTD32A-167TQIN的Datasheet PDF文件第4页浏览型号AS7C251MNTD32A-167TQIN的Datasheet PDF文件第5页浏览型号AS7C251MNTD32A-167TQIN的Datasheet PDF文件第6页浏览型号AS7C251MNTD32A-167TQIN的Datasheet PDF文件第8页浏览型号AS7C251MNTD32A-167TQIN的Datasheet PDF文件第9页浏览型号AS7C251MNTD32A-167TQIN的Datasheet PDF文件第10页 
AS7C251MNTD32A  
AS7C251MNTD36A  
®
State diagram for NTD SRAM  
Burst  
Read  
Burst  
Read  
Read  
Burst  
Read  
Dsel  
Dsel  
Burst  
Burst  
Write  
Burst  
Write  
Burst  
Write  
Write  
Absolute maximum ratings  
Parameter  
Power supply voltage relative to GND  
Input voltage relative to GND (input pins)  
Input voltage relative to GND (I/O pins)  
Power dissipation  
Symbol  
Min  
Max  
+3.6  
Unit  
V
VDD, VDDQ  
VIN  
–0.3  
–0.3  
–0.3  
VDD + 0.3  
VDDQ + 0.3  
1.8  
V
VIN  
V
Pd  
W
Short circuit output current  
IOUT  
20  
mA  
oC  
oC  
oC  
Storage temperature (TQFP)  
Storage temperature (BGA)  
Tstg (TQFP)  
Tstg (BGA)  
Tbias  
–65  
–65  
–65  
+150  
+125  
Temperature under bias  
+135  
Stresses greater than those listed under “Absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only, and functional  
operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to  
absolute maximum rating conditions may affect reliability.  
Recommended operating conditions  
Parameter  
Supply voltage for inputs  
Supply voltage for I/O  
Ground supply  
Symbol  
VDD  
Min  
2.375  
2.375  
0
Nominal  
Max  
2.625  
2.625  
0
Unit  
V
2.5  
2.5  
0
VDDQ  
Vss  
V
V
4/26/04, V 1.0  
Alliance Semiconductor  
P. 7 of 22  

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