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AS7C251MNTD32A-167TQC PDF预览

AS7C251MNTD32A-167TQC

更新时间: 2024-01-03 15:52:04
品牌 Logo 应用领域
ALSC 时钟静态存储器内存集成电路
页数 文件大小 规格书
22页 453K
描述
ZBT SRAM, 1MX32, 7.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

AS7C251MNTD32A-167TQC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFP包装说明:LQFP, QFP100,.63X.87
针数:100Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.85最长访问时间:7.5 ns
其他特性:FLOW-THROUGH OR PIPELINED ARCHITECTURE最大时钟频率 (fCLK):167 MHz
I/O 类型:COMMONJESD-30 代码:R-PQFP-G100
JESD-609代码:e0长度:20 mm
内存密度:33554432 bit内存集成电路类型:ZBT SRAM
内存宽度:32功能数量:1
端子数量:100字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX32输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装等效代码:QFP100,.63X.87封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:2.5 V
认证状态:Not Qualified座面最大高度:1.6 mm
最大待机电流:0.06 A最小待机电流:2.38 V
子类别:SRAMs最大压摆率:0.35 mA
最大供电电压 (Vsup):2.625 V最小供电电压 (Vsup):2.375 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:14 mm

AS7C251MNTD32A-167TQC 数据手册

 浏览型号AS7C251MNTD32A-167TQC的Datasheet PDF文件第16页浏览型号AS7C251MNTD32A-167TQC的Datasheet PDF文件第17页浏览型号AS7C251MNTD32A-167TQC的Datasheet PDF文件第18页浏览型号AS7C251MNTD32A-167TQC的Datasheet PDF文件第20页浏览型号AS7C251MNTD32A-167TQC的Datasheet PDF文件第21页浏览型号AS7C251MNTD32A-167TQC的Datasheet PDF文件第22页 
AS7C251MNTD32A  
AS7C251MNTD36A  
®
AC test conditions  
• Output load: For tLZC, tLZOE, tHZOE, and tHZC, see Figure C. For all others, see Figure B.  
• Input pulse level: GND to 2.5V. See Figure A.  
Thevenin equivalent:  
• Input rise and fall time (measured at 0.25V and 2.25V): 2 ns. See Figure A.  
• Input and output timing reference levels: 1.25V.  
+2.5V  
319/1667Ω  
50  
DOUT  
353 /1538  
7
+
2.5V  
VL=VDDQ/2  
DOUT  
5 pF*  
GND  
90%  
10%  
GND  
Figure A: Input waveform  
90%  
30 pF*  
10%  
*including scope  
and jig capacitance  
Figure B: Output load (A)  
Figure C: Output load(B)  
Notes  
1) For test conditions, see “AC test conditions”, Figures A, B, and C  
2) This parameter measured with output load condition in Figure C.  
3) This parameter is sampled, but not 100% tested.  
4) tHZOE is less than tLZOE, and tHZC is less than tLZC at any given temperature and voltage.  
5) tCH is measured high above VIH, and tCL is measured low below VIL  
6) This is a synchronous device. All addresses must meet the specified setup and hold times for all rising edges of CLK. All other synchronous inputs must  
meet the setup and hold times with stable logic levels for all rising edges of CLK when chip is enabled.  
7) Write refers to R/  
W
and BW[a,b,c,d]  
.
8) Chip select refers to CE0  
,
CE1, and CE2.  
4/26/04, V 1.0  
Alliance Semiconductor  
P. 19 of 22  

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