Datasheet > AS4SD4M16

AS4SD4M16

更新时间： 2024-09-28 06:37:51

品牌	Logo	应用领域
AUSTIN		存储动态存储器
页数	文件大小	规格书
50页	1139K
描述
4 Meg x 16 SDRAM Synchronous DRAM Memory

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数据手册

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AS4SD4M16 数据手册

SDRAM

AS4SD4M16

Austin Semiconductor, Inc.

4 Meg x 16 SDRAM

PIN ASSIGNMENT

Synchronous DRAM Memory

(Top View)

FEATURES

54-PinTSOP

•

Extended Testing Over -55°C to +125° C and

Industrial Temp -40°C to 85° C

•

WRITE Recovery ( t_WR/ t_DPL) t_WR= 2 CLK

Fully synchronous; all signals registered on positive

edge of system clock

•

Internal pipelined operation; column address can be

changed every clock cycle

•

Internal banks for hiding row access/precharge

Programmable burst lengths: 1, 2, 4, 8 or full page

Auto Precharge and Auto Refresh Modes

Self Refresh Mode (Industrial, -40°C to 85° C only)

4,096-cycle refresh

LVTTL-compatible inputs and outputs

Single +3.3V ±0.3V power supply

Longer lead TSOP for improved reliability

(OCPL*)

•

Short Flow / Long Flow Test Screening Options

OPTIONS

MARKING

•

Configurations

4 Meg x 16 (1 Meg x 16 x 4 banks)

Plastic Package - OCPL*

4M16

•

54-pin TSOP (400 mil)

No. 901

•

Timing (Cycle Time)

8ns; t_AC= 6.5ns @ CL = 3 ( t_RP- 24ns)

10ns; t_AC= 9ns @ CL = 2

Note: “\” indicates an active low.

-8

-10

4 Meg x 16

1 Meg x 16 x 4 banks

Configuration

Operating Temperature Ranges

-Military (-55°C to +125° C)

-Industrial Temp (-40°C to 85° C)

Refresh Count

Row Addressing

Bank Addressing

Column Addressing

4K (A0-A11)

4 (BA0, BA1)

256 (A0-A7)

KEY TIMING PARAMETERS

SPEED

CLOCK

ACCESS TIME

SETUP

TIME

2ns

3ns

2ns

HOLD

TIME

1ns

GRADE FREQUENCY CL = 2** CL = 3**

-8

-10

-8

125 MHz

100 MHz

83 MHz

66 MHz

–

9ns

6.5ns

7ns

–

For more products and information

please visit our web site at

-10

–

3ns

1ns

www.austinsemiconductor.com

*Off-center parting line

**CL = CAS (READ) latency

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS4SD4M16

Rev. 1.5 10/01

12 3 4 5 6 7...50

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AS4SD4M16_05	AUSTIN	获取价格	4 Meg x 16 SDRAM Synchronous DRAM Memory
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