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AS4SD4M16DGC-10/IT PDF预览

AS4SD4M16DGC-10/IT

更新时间: 2024-02-19 06:48:48
品牌 Logo 应用领域
MICROSS 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
53页 540K
描述
Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

AS4SD4M16DGC-10/IT 技术参数

生命周期:Active零件包装代码:TSOP2
包装说明:TSOP2,针数:54
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.12
访问模式:FOUR BANK PAGE BURST最长访问时间:7 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PDSO-G54
JESD-609代码:e0长度:22.22 mm
内存密度:67108864 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:4194304 words字数代码:4000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:4MX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
认证状态:Not Qualified座面最大高度:1.2 mm
自我刷新:YES最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

AS4SD4M16DGC-10/IT 数据手册

 浏览型号AS4SD4M16DGC-10/IT的Datasheet PDF文件第2页浏览型号AS4SD4M16DGC-10/IT的Datasheet PDF文件第3页浏览型号AS4SD4M16DGC-10/IT的Datasheet PDF文件第4页浏览型号AS4SD4M16DGC-10/IT的Datasheet PDF文件第5页浏览型号AS4SD4M16DGC-10/IT的Datasheet PDF文件第6页浏览型号AS4SD4M16DGC-10/IT的Datasheet PDF文件第7页 
SDRAM  
AS4SD4M16  
4 Meg x 16 SDRAM  
Synchronous DRAM Memory  
PIN ASSIGNMENT  
(Top View)  
FEATURES  
54-Pin TSOP  
Full Military temp (-55°C to 125°C) processing available  
Copper lead frame option for enhanced reliability  
WRITE Recovery ( tWR/ tDPL) tWR = 2 CLK  
Fully synchronous; all signals registered on positive  
edge of system clock  
Internal pipelined operation; column address can be  
changed every clock cycle  
Internal banks for hiding row access/precharge  
Programmable burst lengths: 1, 2, 4, 8 or full page  
Auto Precharge and Auto Refresh Modes  
Self Refresh Mode (IT & ET)  
4,096-cycle refresh  
LVTTL-compatible inputs and outputs  
Single +3.3V ±0.3V power supply  
Longer lead TSOP for improved reliability (OCPL*)  
OPTIONS  
MARKING  
Congurations  
4 Meg x 16 (1 Meg x 16 x 4 banks)  
4M16  
Plastic Package – 54-pin TSOPII (400 mil)  
- Alloy 42 lead frame - OCPL*  
DG No. 901  
- Copper lead frame  
DGC  
(Pb/Sn nish or RoHS available)  
Note: “\” indicates an active low.  
Timing (Cycle Time)  
4 Meg x 16  
1 Meg x 16 x 4 banks  
8ns; tAC = 6.5ns @ CL = 3 ( tRP - 24ns)  
10ns; tAC = 9ns @ CL = 2  
-8  
Configuration  
Refresh Count  
-10  
4K  
Operating Temperature Ranges  
-Industrial Temp (-40°C to 85° C)  
-Enhanced Temp (-40°C to +105°C)  
-Military Temp (-55°C to 125°C)  
Row Addressing  
Bank Addressing  
Column Addressing  
4K (A0-A11)  
4 (BA0, BA1)  
256 (A0-A7)  
IT  
ET  
XT  
KEY TIMING PARAMETERS  
SPEED  
CLOCK  
ACCESS TIME  
SETUP  
TIME  
2ns  
3ns  
2ns  
HOLD  
TIME  
1ns  
1ns  
1ns  
For more products and information  
please visit our web site at  
www.micross.com  
GRADE FREQUENCY CL = 2** CL = 3**  
-8  
-10  
-8  
125 MHz  
100 MHz  
83 MHz  
66 MHz  
9ns  
9ns  
6.5ns  
7ns  
-10  
3ns  
1ns  
*Off-center parting line  
**CL = CAS (READ) latency  
Micross Components reserves the right to change products or specications without notice.  
AS4SD4M16  
Rev. 2.6 04/10  
1

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