生命周期: | Active | 零件包装代码: | TSOP2 |
包装说明: | TSOP2, | 针数: | 54 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.64 |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | R-PDSO-G54 |
JESD-609代码: | e0 | 长度: | 22.22 mm |
内存密度: | 67108864 bit | 内存集成电路类型: | SYNCHRONOUS DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 54 |
字数: | 4194304 words | 字数代码: | 4000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 4MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TSOP2 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | MILITARY | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子节距: | 0.8 mm |
端子位置: | DUAL | 宽度: | 10.16 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AS4SD4M16DG-10/IT | AUSTIN |
获取价格 |
4 Meg x 16 SDRAM Synchronous DRAM Memory |
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AS4SD4M16DG-10/XT | AUSTIN |
获取价格 |
4 Meg x 16 SDRAM Synchronous DRAM Memory |
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AS4SD4M16DG-8/IT | AUSTIN |
获取价格 |
4 Meg x 16 SDRAM Synchronous DRAM Memory |
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AS4SD4M16DG-8/XT | AUSTIN |
获取价格 |
4 Meg x 16 SDRAM Synchronous DRAM Memory |
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AS4SD4M16DGC/IT | MICROSS |
获取价格 |
Synchronous DRAM, 4MX16, CMOS, PDSO54, TSOP2-54 |
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AS4SD4M16DGC/XT | MICROSS |
获取价格 |
Synchronous DRAM, 4MX16, CMOS, PDSO54, TSOP2-54 |
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AS4SD4M16DGC-10/ET | MICROSS |
获取价格 |
Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 |
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AS4SD4M16DGC-10/IT | MICROSS |
获取价格 |
Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 |
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AS4SD4M16DGC-10/XT | MICROSS |
获取价格 |
Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 |
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AS4SD4M16DGC-8/ET | MICROSS |
获取价格 |
Synchronous DRAM, 4MX16, 6.5ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 |
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