5秒后页面跳转
AS4C1M16F5-50TI PDF预览

AS4C1M16F5-50TI

更新时间: 2024-02-02 01:11:20
品牌 Logo 应用领域
其他 - ETC 内存集成电路光电二极管动态存储器
页数 文件大小 规格书
21页 475K
描述
5V 1M X 16 CMOS DRAM

AS4C1M16F5-50TI 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP44/50,.46,32
针数:50Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.78Is Samacsys:N
访问模式:FAST PAGE最长访问时间:50 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:20.95 mm内存密度:16777216 bit
内存集成电路类型:FAST PAGE DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:44字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP44/50,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):240
电源:5 V认证状态:Not Qualified
刷新周期:1024座面最大高度:1.2 mm
自我刷新:NO最大待机电流:0.002 A
子类别:DRAMs最大压摆率:0.145 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

AS4C1M16F5-50TI 数据手册

 浏览型号AS4C1M16F5-50TI的Datasheet PDF文件第4页浏览型号AS4C1M16F5-50TI的Datasheet PDF文件第5页浏览型号AS4C1M16F5-50TI的Datasheet PDF文件第6页浏览型号AS4C1M16F5-50TI的Datasheet PDF文件第8页浏览型号AS4C1M16F5-50TI的Datasheet PDF文件第9页浏览型号AS4C1M16F5-50TI的Datasheet PDF文件第10页 
AS4C1M16F5  
®
Notes  
1
2
3
I
, I , and I  
are dependent on frequency.  
CC1 CC3  
CC4  
I
and I  
depend on output loading. Specified values are obtained with the output open.  
CC1  
CC4  
An initial pause of 200 µs is required after power-up followed by any 8 RAS cycles before proper device operation is achieved. In the case of an internal  
refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 8 initialization cycles are required after  
extended periods of bias without clocks (greater than 8 ms).  
4
AC Characteristics assume t = 2 ns. All AC parameters are measured with a load equivalent to two TTL loads and 100 pF, V (min) GND and V  
IH  
T
IL  
(max) V  
.
CC  
5
6
V
(min) and V (max) are reference levels for measuring timing of input signals. Transition times are measured between V and V .  
IH  
IL  
IH  
IL  
Operation within the t  
(max) limit insures that t  
(max) can be met. t  
(max) is specified as a reference point only. If t  
is greater than the  
RCD  
RAC  
RCD  
RCD  
specified t  
(max) limit, then access time is controlled exclusively by t  
.
CAC  
RCD  
7
Operation within the t  
(max) limit insures that t  
(max) can be met. t (max) is specified as a reference point only. If t  
RAD  
is greater than the  
RAD  
RAC  
RAD  
specified t  
(max) limit, then access time is controlled exclusively by t .  
AA  
RAD  
8
Assumes three state test load (5 pF and a 380 Thevenin equivalent).  
Either t or t must be satisfied for a read cycle.  
9
RCH  
RRH  
10  
t
(max) defines the time at which the output achieves the open circuit condition; it is not referenced to output voltage levels. t  
is referenced from  
OFF  
OFF  
rising edge of RAS or CAS, whichever occurs last.  
t , t , t , t and t are not restrictive operating parameters. They are included in the datasheet as electrical characteristics only.  
WCS WCH RWD CWD  
11  
AWD  
If tWS t (min) and tWH t (min), the cycle is an early write cycle and data out pins will remain open circuit, high impedance, throughout the  
WS  
WH  
cycle. If tRWD t  
(min), t  
t  
(min) and tAWD t  
(min), the cycle is a read-write cycle and the data out will contain data read from the  
RWD  
CWD  
CWD  
AWD  
selected cell. If neither of the above conditions is satisfied, the condition of the data out at access time is indeterminate.  
12 These parameters are referenced to CAS leading edge in early write cycles and to WE leading edge in read-write cycles.  
13 Access time is determined by the longest of t or t or t  
CAA  
CAC  
CPA  
14  
tASC t to achieve t (min) and t (max) values.  
CP PC CPA  
15 These parameters are sampled and not 100% tested.  
16 These characteristics apply to AS4C1M16F5 5V devices.  
AC test conditions  
- Access times are measured with output reference levels  
of VOH = 2.4V and VOL = 0.4V,  
+5V  
V
IH = 2.4V and VIL = 0.8V  
R1 = 828Ω  
- Input rise and fall times: 2 ns  
Dout  
100 pF*  
R2 = 295Ω  
*including scope  
and jig capacitance  
GND  
Figure A: Equivalent output load  
Falling input  
Key to switching waveforms  
Rising input  
Undefined output/don’t care  
4/11/01; v.0.9.1  
Alliance Semiconductor  
P. 7 of 21  

与AS4C1M16F5-50TI相关器件

型号 品牌 描述 获取价格 数据表
AS4C1M16F5-60JC ETC 5V 1M X 16 CMOS DRAM

获取价格

AS4C1M16F5-60JI ETC 5V 1M X 16 CMOS DRAM

获取价格

AS4C1M16F5-60TC ETC 5V 1M X 16 CMOS DRAM

获取价格

AS4C1M16F5-60TI ETC 5V 1M X 16 CMOS DRAM

获取价格

AS4C1M16S-6TIN ALSC 1M x 16 bit Synchronous DRAM (SDRAM)

获取价格

AS4C1M16S-7TCN ALSC 1M x 16 bit Synchronous DRAM (SDRAM)

获取价格