Datasheet > 存储 > DRAM> AS4C1M16E5-60TI

AS4C1M16E5-60TI

更新时间： 2024-01-26 17:49:09

品牌	Logo	应用领域
ALSC		动态存储器
页数	文件大小	规格书
22页	601K
描述
5V 1M×16 CMOS DRAM (EDO)

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AS4C1M16E5-60TI 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	SOJ	包装说明：	SOJ, SOJ42,.44
针数：	42	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8542.32.00.02
风险等级：	5.73	Is Samacsys：	N
访问模式：	FAST PAGE WITH EDO	最长访问时间：	60 ns
其他特性：	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	I/O 类型：	COMMON
JESD-30 代码：	R-PDSO-J42	JESD-609代码：	e0
长度：	27.31 mm	内存密度：	16777216 bit
内存集成电路类型：	EDO DRAM	内存宽度：	16
功能数量：	1	端口数量：	1
端子数量：	42	字数：	1048576 words
字数代码：	1000000	工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	1MX16	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	SOJ
封装等效代码：	SOJ42,.44	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	电源：	5 V
认证状态：	Not Qualified	刷新周期：	1024
座面最大高度：	3.76 mm	自我刷新：	YES
最大待机电流：	0.001 A	子类别：	DRAMs
最大压摆率：	0.135 mA	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	J BEND	端子节距：	1.27 mm
端子位置：	DUAL	宽度：	10.16 mm
Base Number Matches：	1

AS4C1M16E5-60TI 数据手册

AS4C1M16E5

AS4C1M16E5 ordering information

Package \ RAS access time

45 ns

50 ns

60 ns

AS4C1M16E5-50JC

AS4C1M16E5-50JI

AS4C1M16E5-60JC

AS4C1M16E5-60JI

Plastic SOJ, 400 mil, 42-pin

AS4C1M16E5-45JC

AS4C1M16E5-50TC

AS4C1M16E5-50TI

AS4C1M16E5-60TC

AS4C1M16E5-60TI

TSOP II, 400 mil, 44/50-pin

AS4C1M16E5-45TC

AS4C1M16E5 part numbering system

AS4

1M16E5

–XX

C = 5V CMOS

Package:

Temperature range

DRAM prefix

LC = 3.3V CMOS

Device number RAS access time J = 42-pin SOJ 400 mil

C=Commercial, 0°C to 70 °C

T = 44/50-pin TSOP II 400 mil I=Industrial, -40°C to 85°C

4/11/01; v.1.0

Alliance Semiconductor

P. 22 of 22

© Copyright Alliance Semiconductor Corporation. All rights reserved. Our three-point logo, our name and Intelliwatt are trademarks or registered trademarks of Alliance. All other brand and product names

may be the trademarks of their respective companies. Alliance reserves the right to make changes to this document and its products at any time without notice. Alliance assumes no responsibility for any errors

that may appear in this document. The data contained herein represents Alliance's best data and/or estimates at the time of issuance. Alliance reserves the right to change or correct this data at any time, without

notice. If the product described herein is under development, significant changes to these specifications are possible. The information in this product data sheet is intended to be general descriptive information

for potential customers and users, and is not intended to operate as, or provide, any guarantee or warrantee to any user or customer. Alliance does not assume any responsibility or liability arising out of the

application or use of any product described herein, and disclaims any express or implied warranties related to the sale and/or use of Alliance products including liability or warranties related to fitness for a

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rights, trademarks, or any other intellectual property rights of Alliance or third parties. Alliance does not authorize its products for use as critical components in life-supporting systems where a malfunction or

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与AS4C1M16E5-60TI相关器件

型号	品牌	描述	获取价格	数据表
AS4C1M16F5	ETC	5V 1M X 16 CMOS DRAM	获取价格
AS4C1M16F5-45JC	ALSC	Fast Page DRAM, 1MX16, 45ns, CMOS, PDSO42, 0.400 INCH, PLASTIC, SOJ-42	获取价格
AS4C1M16F5-45TC	ALSC	Fast Page DRAM, 1MX16, 45ns, CMOS, PDSO44, 0.400 INCH, TSOP2-50/44	获取价格
AS4C1M16F5-50JC	ETC	5V 1M X 16 CMOS DRAM	获取价格
AS4C1M16F5-50JI	ETC	5V 1M X 16 CMOS DRAM	获取价格
AS4C1M16F5-50TC	ETC	5V 1M X 16 CMOS DRAM	获取价格

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