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AS42C4256EC-12/883 PDF预览

AS42C4256EC-12/883

更新时间： 2024-11-07 19:42:59
品牌 Logo 应用领域
MICROSS 动态存储器内存集成电路
页数 文件大小 规格书
38页 454K
描述
Video DRAM,

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AS42C4256EC-12/883 数据手册

 浏览型号AS42C4256EC-12/883的Datasheet PDF文件第2页浏览型号AS42C4256EC-12/883的Datasheet PDF文件第3页浏览型号AS42C4256EC-12/883的Datasheet PDF文件第4页浏览型号AS42C4256EC-12/883的Datasheet PDF文件第5页浏览型号AS42C4256EC-12/883的Datasheet PDF文件第6页浏览型号AS42C4256EC-12/883的Datasheet PDF文件第7页 
AS42C4256 883C  
256K x 4 VRAM  
AUSTIN SEMICONDUCTOR, INC.  
256K x 4 DRAM  
WITH 512 x 4 SAM  
PIN ASSIGNMENT (Top View)  
VRAM  
AVAILABLE AS MILITARY  
SPECIFICATION  
• MIL-STD-883  
28-Pin DIP  
(400 MIL)  
28-Pin SOJ  
28-Pin LCC  
FEATURES  
VSS  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
SC  
SDQ1  
SDQ2  
TR\-OE\  
DQ1  
DQ2  
ME\-WE\  
NC  
1
2
3
4
5
6
7
8
• Industry standard pinout, timing and functions  
• High-performance, CMOS silicon-gate process  
• Single +5V ±10% power supply  
SC  
SDQ1  
SDQ2  
TR\-OE\  
DQ1  
DQ2  
ME\-WE\  
NC  
1
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
VSS  
SDQ4  
SDQ3  
SE\  
DQ4  
DQ3  
DSF  
CAS\  
QSF  
A0  
A1  
A2  
A3  
A7  
2
3
4
5
SDQ4  
SDQ3  
SE\  
DQ4  
DQ3  
DSF  
CAS\  
QSF  
A0  
A1  
A2  
A3  
A7  
• Inputs and outputs are fully TTL compatible  
• Refresh modes:RAS\ ONLY, CAS\-BEFORE-RAS\ (CBR)  
and HIDDEN  
6
7
8
9
• 512-cycle refresh within 8ms  
RAS\  
A8  
A6  
A5  
A4  
RAS\  
A8  
A6  
A5  
A4  
9
• Optional FAST PAGE MODE access cycles  
• Dual port organization: 256K x 4 DRAM port  
512 x 4 SAM port  
• No refresh required for serial access memory  
• Low power: 15mW standby; 275mW active, typical  
10  
11  
12  
13  
14  
10  
11  
12  
13  
14  
VCC  
VCC  
SPECIAL FUNCTIONS  
28-Pin DIP  
(F-12)  
• JEDEC Standard Function set  
• PERSISTENT MASKED WRITE  
• SPLIT READ TRANSFER  
VSS  
SC  
1
2
3
4
5
6
7
8
9
28  
SDQ4  
SDQ3  
SE\  
DQ4  
DQ3  
DSF  
CAS\  
QSF  
A0  
A1  
A2  
A3  
A7  
SDQ1  
SDQ2  
TR\-OE\  
DQ1  
DQ2  
ME\-WE\  
NC  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
• WRITE TRANSFER/SERIAL INPUT  
• ALTERNATE WRITE TRANSFER  
• BLOCK WRITE  
OPTIONS  
MARKING  
RAS\  
A8  
A6  
A5  
A4  
• Timing [DRAM, SAM (cycle/access)]  
100ns, 30ns/27ns  
10  
11  
12  
13  
14  
-10  
-12  
120ns, 35ns/35ns  
80ns, 30ns/25ns  
-8  
VCC  
• Packages  
Ceramic SOJ  
Ceramic DIP (400 mil)  
Ceramic LCC  
DCJ  
C
EC  
F
No. 500  
No. 109  
No. 203  
No. 302  
Ceramic Flat Pack  
GENERALDESCRIPTION  
The AS42C4256 883C is a high-speed, dual port CMOS  
dynamic random access memory or video RAM (VRAM) containing  
1,048,576 bits. These bits may be accessed by a 4-bit wide DRAM  
port or a 512 x 4-bit serial access memory (SAM) port. Data may  
be transferred bidirectionally between the DRAM and the SAM.  
The DRAM portion of the VRAM is functionally identical to  
the AS4C4256 (256K x 4 DRAM). Four 512-bit data registers make  
up the SAM portion of the VRAM. Data I/O and internal data  
transfer are accomplished using three separate bidirectional data  
paths; the 4-bit random access I/O port, the four internal 512 bit  
wide paths between the DRAM and the SAM, and the 4-bit serial I/O  
port for the SAM. The rest of the circuitry consists of the control,  
timing and address decoding logic. Each port may be operated  
asynchronously and independently of the other except when data is  
being transferred  
AS42C4256 883C  
Austin Semiconductor, Inc., reserves the right to change products or specifications without notice.  
REV. 3/97  
DS000016  
3-27  
1234567...38

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