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AS30P50S-Q1 PDF预览

AS30P50S-Q1

更新时间: 2024-11-25 18:07:03
品牌 Logo 应用领域
安邦 - ANBON /
页数 文件大小 规格书
5页 2133K
描述
DFN5*6-8L

AS30P50S-Q1 数据手册

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AS30P50S-Q1  
P-Channel Super Trench Power MOSFET  
Product Summary  
V(BR)DSS  
RDS(on)MAX  
ID  
-30V  
7mΩ@-10V  
-50A  
Feature  
Application  
ò
ò
ò
ò
High density cell design for ultra low Rdson  
ò
Battery and loading switching  
Fully characterized avalanche voltage and current  
Good stability and uniformity with high EAS  
Suffix "-Q1" for AEC-Q101  
Package  
Circuit diagram  
DFN5X6-8L  
Marking  
30P50  
XXXXX  
Document ID  
Issued Date  
2013/03/08  
Revised Date  
2015/05/16  
Revision  
D
Page.  
5
Page 1  
AS-1150159  

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