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AS29F010CW-15/XT PDF预览

AS29F010CW-15/XT

更新时间: 2024-02-13 09:21:46
品牌 Logo 应用领域
AUSTIN /
页数 文件大小 规格书
22页 242K
描述
128K x 8 FLASH UNIFORM SECTOR 5.0V FLASH MEMORY

AS29F010CW-15/XT 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:DIP
包装说明:0.600 INCH, CERAMIC, DIP-32针数:32
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.71
最长访问时间:150 nsJESD-30 代码:R-CDIP-T32
JESD-609代码:e0长度:42.418 mm
内存密度:1048576 bit内存集成电路类型:FLASH
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:128KX8封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DIP封装形状:RECTANGULAR
封装形式:IN-LINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED编程电压:5 V
认证状态:Not Qualified座面最大高度:5.1308 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:MILITARY
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED类型:NOR TYPE
宽度:15.24 mm

AS29F010CW-15/XT 数据手册

 浏览型号AS29F010CW-15/XT的Datasheet PDF文件第6页浏览型号AS29F010CW-15/XT的Datasheet PDF文件第7页浏览型号AS29F010CW-15/XT的Datasheet PDF文件第8页浏览型号AS29F010CW-15/XT的Datasheet PDF文件第10页浏览型号AS29F010CW-15/XT的Datasheet PDF文件第11页浏览型号AS29F010CW-15/XT的Datasheet PDF文件第12页 
FLASH  
AS29F010  
Austin Semiconductor, Inc.  
non-suspended sectors. The system can determine the status reverts to the Erase Suspend mode, and is ready for another  
of the program operation using the DQ7 or DQ6 status bits, just valid operation. See “Autoselect Command Sequence” for more  
as in the standard program operation. See “Write Operation information.  
Status” for more information.  
The system must write the Erase Resume command  
The system may also write the autoselect command (address bits are “don’t care”) to exit the erase suspend mode  
sequence when the device is in the Erase Suspend mode. The and continue the sector erase operation. Further writes of the  
device allows reading autoselect codes even at addresses within Resume command are ignored. Another Erase Suspend  
erasing sectors, since the codes are not stored in the memory command can be written after the device has resumed erasing.  
array. When the device exits the autoselect mode, the device  
TABLE 4: Command Definitions  
2,3  
Bus Cycles  
Third  
1
Command Sequence  
First  
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data  
RA RD  
Second  
Fourth  
Fifth  
Sixth  
4
1
1
3
Read  
5
6
XXXX F0  
Reset  
Reset  
555  
AA  
2AA  
55  
555  
F0  
Manufacturer ID  
Device ID  
4
4
555  
555  
AA  
AA  
2AA  
2AA  
55  
55  
555  
555  
90  
90  
X00  
X01  
1
20  
7
Autoselect  
(SA)  
X02  
0
8
4
555  
AA  
2AA  
55  
555  
90  
Sector Protect Verify  
1
Program  
Chip Erase  
Sector Erase  
4
6
6
555  
555  
555  
AA  
AA  
AA  
2AA  
2AA  
2AA  
55  
55  
55  
555  
555  
555  
A0  
80  
80  
PA  
555  
555  
PD  
AA  
AA  
2AA  
2AA  
55  
55  
555  
SA  
10  
30  
9
1
1
XXX  
XXX  
B0  
30  
Erase Suspend  
10  
Erase Resume  
LEGEND:  
X = Don’t Care  
RA = Address of the memory location to be read  
RD = Data read from location RA during read operation  
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE\ or CE\ pulse, whichever happens later  
PD = Data to be programmed at location PA. Data latches on the rising edge of WE\ or CE\ pulse, whichever happens first  
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A16-A14 uniquely select any sector.  
NOTES:  
1. See Table 1 for description of bus operations.  
2. All values are in hexadecimal.  
3. Except when reading array or autoselect data, all command bus cycles are write operations.  
4. No unlock or command cycles required when reading array data.  
5. The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high (while the device is  
providing status data).  
6. The device accepts the three-cycle reset command sequence for backward compatibility.  
7. The fourth cycle of the autoselect command sequence is a read operation.  
8. The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more information.  
9. The system may read in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase Suspend command is valid  
only during a sector erase operation.  
10. The Erase Resume command is valid only during the Erase Suspend mode.  
AS29F010  
AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice.  
Rev. 0.3 10/02  
9

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